TY - GEN
T1 - Fabrication and characterization of MOS transistor tip integrated micro cantilever
AU - Lee, Sang H.
AU - Lim, Geunbae
AU - Moon, Wonkyu
PY - 2005
Y1 - 2005
N2 - We fabricate and characterize the metal-oxide-semiconductor (MOS) transistor tip integrated micro cantilever, which is proposed for a future high-density data storage system. The integrated MOS transistor tip as the sensing part has some advantages; it detects the electric signal with the fast speed compared with the previous SPM probes, and it can reduce the required equipments such as the lock-in-amplifier. The MOS transistor tip is fabricated 3-dimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by self-aligned technique, using crystallographic dependant wet etching. The well-known convex comer compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured and the results show the well-established detection properties.
AB - We fabricate and characterize the metal-oxide-semiconductor (MOS) transistor tip integrated micro cantilever, which is proposed for a future high-density data storage system. The integrated MOS transistor tip as the sensing part has some advantages; it detects the electric signal with the fast speed compared with the previous SPM probes, and it can reduce the required equipments such as the lock-in-amplifier. The MOS transistor tip is fabricated 3-dimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by self-aligned technique, using crystallographic dependant wet etching. The well-known convex comer compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured and the results show the well-established detection properties.
KW - Convex comer compensation
KW - Crystallographic dependant wet etching
KW - Future high-density data storage system
KW - Metal-oxide-semiconductor (MOS) transistor tip
KW - Self-aligned technique
UR - https://www.scopus.com/pages/publications/32144452778
M3 - Conference contribution
AN - SCOPUS:32144452778
SN - 0976798522
T3 - 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
SP - 505
EP - 508
BT - 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
A2 - Laudon, M.
A2 - Romanowicz, B.
T2 - 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
Y2 - 8 May 2005 through 12 May 2005
ER -