@inproceedings{72e85f76cdd540d29b51b28291460f38,
title = "Fabrication and evaluation of metal-oxide-semiconductor transistor probe",
abstract = "The metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip is fabricated and evaluated for the surface electric properties. The high working speed and the high sensitivity of the MOS transistor improve the scanning speed and the system minimization. The device is fabricated with the standard CMOS process and FIB nano deposition. The device is applied to the patterned sample plate, and the measuring result shows the well defined line patterns.",
keywords = "FIB, Metal-Oxide-Semicondutor (MOS) transistor, Nano tip, SPM probe, Surface electric property",
author = "Lee, \{Sang H.\} and Geunbae Lim and Wonkyu Moon",
year = "2007",
doi = "10.1109/NANO.2007.4601234",
language = "English",
isbn = "1424406080",
series = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",
pages = "470--473",
booktitle = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",
note = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 ; Conference date: 02-08-2007 Through 05-08-2007",
}