TY - GEN
T1 - Fabrication and evaluation of V-shaped mos transistor probe
AU - Lee, Sang H.
AU - Lim, Geunbae
AU - Shin, Hyunjung
AU - Moon, Wonkyu
PY - 2008
Y1 - 2008
N2 - The V-shaped metal-oxide-semiconductor (MOS) transistor probe is fabricated and evaluated to detect the surface electric properties. The V-shaped structure is selected for the better lateral stiffness compared with the simple rectangular structure [1], and the specific dimensions are determined using the parallel beam approximation (PBA) [2]. The conductive nano tip is grown with the focused-ion-beam (FIB) system, which delivers the electric properties from the sample surface to the MOS transistor. Since the MOS transistor has the high working frequency and the high sensitivity, the device can detect the small electric properties with the high speed. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions. The results represent the well defined measurement patterns and show the promising aspect of the surface electric property detection with high sensitivity and high working frequency.
AB - The V-shaped metal-oxide-semiconductor (MOS) transistor probe is fabricated and evaluated to detect the surface electric properties. The V-shaped structure is selected for the better lateral stiffness compared with the simple rectangular structure [1], and the specific dimensions are determined using the parallel beam approximation (PBA) [2]. The conductive nano tip is grown with the focused-ion-beam (FIB) system, which delivers the electric properties from the sample surface to the MOS transistor. Since the MOS transistor has the high working frequency and the high sensitivity, the device can detect the small electric properties with the high speed. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions. The results represent the well defined measurement patterns and show the promising aspect of the surface electric property detection with high sensitivity and high working frequency.
UR - http://www.scopus.com/inward/record.url?scp=50149086943&partnerID=8YFLogxK
U2 - 10.1109/MEMSYS.2008.4443665
DO - 10.1109/MEMSYS.2008.4443665
M3 - Conference contribution
AN - SCOPUS:50149086943
SN - 9781424417933
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 351
EP - 354
BT - MEMS 2008 Tucson - 21st IEEE International Conference on Micro Electro Mechanical Systems
T2 - 21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008 Tucson
Y2 - 13 January 2008 through 17 January 2008
ER -