Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Sang Woo Kim; Wonjun Shin; Munhyeon Kim; Ki Ryun Kwon; Jiyong Yim; Jeonghan Kim; Changhyeon Han; Soi Jeong; Eun Chan Park; Ji Won You; Hyunwoo Kim; Rino Choi; Daewoong Kwon

doi:10.1109/LED.2023.3324695

Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Sang Woo Kim
, Wonjun Shin
, Munhyeon Kim
, Ki Ryun Kwon
, Jiyong Yim
, Jeonghan Kim
, Changhyeon Han
, Soi Jeong
, Eun Chan Park
, Ji Won You
, Hyunwoo Kim
, Rino Choi
, Daewoong Kwon

Dept. of Electrical and Information Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr(1-x)O2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.

Original language	English
Pages (from-to)	1955-1958
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	12
DOIs	https://doi.org/10.1109/LED.2023.3324695
State	Published - 1 Dec 2023

Keywords

Ferroelectric FET
high-Î° interlayer
HZO
synaptic devices

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10.1109/LED.2023.3324695

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title = "Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer",

abstract = "A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr(1-x)O2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.",

keywords = "Ferroelectric FET, high-{\^I}° interlayer, HZO, synaptic devices",

author = "Kim, \{Sang Woo\} and Wonjun Shin and Munhyeon Kim and Kwon, \{Ki Ryun\} and Jiyong Yim and Jeonghan Kim and Changhyeon Han and Soi Jeong and Park, \{Eun Chan\} and You, \{Ji Won\} and Hyunwoo Kim and Rino Choi and Daewoong Kwon",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = dec,

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doi = "10.1109/LED.2023.3324695",

language = "English",

volume = "44",

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journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

AU - Kim, Sang Woo

AU - Shin, Wonjun

AU - Kim, Munhyeon

AU - Kwon, Ki Ryun

AU - Yim, Jiyong

AU - Kim, Jeonghan

AU - Han, Changhyeon

AU - Jeong, Soi

AU - Park, Eun Chan

AU - You, Ji Won

AU - Kim, Hyunwoo

AU - Choi, Rino

AU - Kwon, Daewoong

PY - 2023/12/1

Y1 - 2023/12/1

N2 - A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr(1-x)O2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.

AB - A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr(1-x)O2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.

KW - Ferroelectric FET

KW - high-Î° interlayer

KW - HZO

KW - synaptic devices

UR - https://www.scopus.com/pages/publications/85176380797

U2 - 10.1109/LED.2023.3324695

DO - 10.1109/LED.2023.3324695

M3 - Article

AN - SCOPUS:85176380797

SN - 0741-3106

VL - 44

SP - 1955

EP - 1958

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Abstract

Keywords

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