Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

Dong Hun Jung; Jung Hwan Park; Han Eol Lee; Jinwoo Byun; Tae Hong Im; Gil Yong Lee; Jae Young Seok; Taeyeong Yun; Keon Jae Lee; Sang Ouk Kim

doi:10.1016/j.nanoen.2019.04.061

Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

Dong Hun Jung, Jung Hwan Park, Han Eol Lee, Jinwoo Byun, Tae Hong Im, Gil Yong Lee, Jae Young Seok, Taeyeong Yun, Keon Jae Lee, Sang Ouk Kim

Dept. of Mechanical System and Design Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr₃)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr₃ based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr₃ recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252% larger CE compared to thermally annealed counterpart.

Original language	English
Pages (from-to)	236-244
Number of pages	9
Journal	Nano Energy
Volume	61
DOIs	https://doi.org/10.1016/j.nanoen.2019.04.061
State	Published - Jul 2019

Keywords

Flash
Flexible electronics
Light-emitting diode
Perovskite
Recrystallization

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@article{12dca9fbd54d45d5896b73b2d25469a0,

title = "Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes",

abstract = "We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr3)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr3 based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62\% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr3 recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252\% larger CE compared to thermally annealed counterpart.",

keywords = "Flash, Flexible electronics, Light-emitting diode, Perovskite, Recrystallization",

author = "Jung, \{Dong Hun\} and Park, \{Jung Hwan\} and Lee, \{Han Eol\} and Jinwoo Byun and Im, \{Tae Hong\} and Lee, \{Gil Yong\} and Seok, \{Jae Young\} and Taeyeong Yun and Lee, \{Keon Jae\} and Kim, \{Sang Ouk\}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = jul,

doi = "10.1016/j.nanoen.2019.04.061",

language = "English",

volume = "61",

pages = "236--244",

journal = "Nano Energy",

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T1 - Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

AU - Jung, Dong Hun

AU - Park, Jung Hwan

AU - Lee, Han Eol

AU - Byun, Jinwoo

AU - Im, Tae Hong

AU - Lee, Gil Yong

AU - Seok, Jae Young

AU - Yun, Taeyeong

AU - Lee, Keon Jae

AU - Kim, Sang Ouk

PY - 2019/7

Y1 - 2019/7

N2 - We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr3)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr3 based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr3 recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252% larger CE compared to thermally annealed counterpart.

AB - We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr3)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr3 based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr3 recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252% larger CE compared to thermally annealed counterpart.

KW - Flash

KW - Flexible electronics

KW - Light-emitting diode

KW - Perovskite

KW - Recrystallization

UR - https://www.scopus.com/pages/publications/85064684228

U2 - 10.1016/j.nanoen.2019.04.061

DO - 10.1016/j.nanoen.2019.04.061

M3 - Article

AN - SCOPUS:85064684228

SN - 2211-2855

VL - 61

SP - 236

EP - 244

JO - Nano Energy

JF - Nano Energy

ER -

Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

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