Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

Dong Hun Jung; Jung Hwan Park; Han Eol Lee; Jinwoo Byun; Tae Hong Im; Gil Yong Lee; Jae Young Seok; Taeyeong Yun; Keon Jae Lee; Sang Ouk Kim

doi:10.1016/j.nanoen.2019.04.061

Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

Dong Hun Jung
, Jung Hwan Park
, Han Eol Lee
, Jinwoo Byun
, Tae Hong Im
, Gil Yong Lee
, Jae Young Seok
, Taeyeong Yun
, Keon Jae Lee
, Sang Ouk Kim

Dept. of Mechanical System and Design Engineering

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr₃)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr₃ based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr₃ recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252% larger CE compared to thermally annealed counterpart.

Original language	English
Pages (from-to)	236-244
Number of pages	9
Journal	Nano Energy
Volume	61
DOIs	https://doi.org/10.1016/j.nanoen.2019.04.061
State	Published - Jul 2019

Keywords

Flash
Flexible electronics
Light-emitting diode
Perovskite
Recrystallization

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@article{12dca9fbd54d45d5896b73b2d25469a0,

title = "Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes",

abstract = "We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr3)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr3 based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62\% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr3 recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252\% larger CE compared to thermally annealed counterpart.",

keywords = "Flash, Flexible electronics, Light-emitting diode, Perovskite, Recrystallization",

author = "Jung, \{Dong Hun\} and Park, \{Jung Hwan\} and Lee, \{Han Eol\} and Jinwoo Byun and Im, \{Tae Hong\} and Lee, \{Gil Yong\} and Seok, \{Jae Young\} and Taeyeong Yun and Lee, \{Keon Jae\} and Kim, \{Sang Ouk\}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = jul,

doi = "10.1016/j.nanoen.2019.04.061",

language = "English",

volume = "61",

pages = "236--244",

journal = "Nano Energy",

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T1 - Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

AU - Jung, Dong Hun

AU - Park, Jung Hwan

AU - Lee, Han Eol

AU - Byun, Jinwoo

AU - Im, Tae Hong

AU - Lee, Gil Yong

AU - Seok, Jae Young

AU - Yun, Taeyeong

AU - Lee, Keon Jae

AU - Kim, Sang Ouk

PY - 2019/7

Y1 - 2019/7

N2 - We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr3)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr3 based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr3 recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252% larger CE compared to thermally annealed counterpart.

AB - We report ultrafast recrystallization of perovskite (methylammonium lead tribromide, MAPbBr3)by flash light annealing (FLA)for light-emitting diode (LED)application. Intense near-infrared (NIR)peak spectrum (830 and 900 nm)of flash light could rapidly heat MAPbBr3 based LED structures over ∼320 °C without radiative damage. Cuboidal morphology of the perovskite active layer was evolved into the dense recrystallized structure with a noticeably small grain size (∼38 nm)by FLA, which significantly promoted the radiative recombination. Surface roughness (root mean square (RMS))of the perovskite layer was decreased by 62% (from 8.47 to 3.22 nm)via FLA, while inhibiting the leakage current that limit current efficiency (CE)of perovskite LED (PeLED). Three dimensional temperature simulation was investigated for the mechanism of flash-induced MAPbBr3 recrystallization. Finally, FLA was successfully exploited for the flexible PeLEDs on polyethylene naphthalate substrates, which exhibited 252% larger CE compared to thermally annealed counterpart.

KW - Flash

KW - Flexible electronics

KW - Light-emitting diode

KW - Perovskite

KW - Recrystallization

UR - https://www.scopus.com/pages/publications/85064684228

U2 - 10.1016/j.nanoen.2019.04.061

DO - 10.1016/j.nanoen.2019.04.061

M3 - Article

AN - SCOPUS:85064684228

SN - 2211-2855

VL - 61

SP - 236

EP - 244

JO - Nano Energy

JF - Nano Energy

ER -

Flash-induced ultrafast recrystallization of perovskite for flexible light-emitting diodes

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