Flexible transparent memory systems based on solution-processed organic memristors

A flexible, transparent memory cell was developed utilizing a solution-processed organic memristor. To achieve resistive switching based on filamentary conduction in the solution-processed device without a metal electrode, we introduced active metal clusters at the interface between the top electrode of the conducting polymer and the polymer insulator. The developed organic memristor was selectively operated as a volatile or non-volatile memory cell according to the conductivity of the polymer electrodes. In addition, our device exhibited high optical transparency, stable mechanical flexibility, and reversible resistive switching characteristics. This effective concept of flexible transparent memory systems based on solution-processed organic memristors can provide useful guidelines for realizing a novel class of wearable optoelectronics.