Formation of semi-coherent interface in TiSi₂/Si structure

The interfacial characteristics of the TiSi₂/Si structure were investigated in detail. It was found that the semi-coherent interface formed with a certain disregistry which was periodically taken up by the misfit dislocations between every three (030)_c49 planes. The semi-coherent interface dominated the interfacial structure in the material and was responsible to the wavy surface of TiSi₂/Si structure. However, the interface accommodated higher energy was a favorable nucleation sites for the C54 phase. Its existence may enhance the C54 phase formation in the further thermal treatments.