TY - CHAP
T1 - Front end of the line process
AU - Han, Jeong Hwan
AU - Cho, Moonju
AU - Delabie, Annelies
AU - Park, Tae Joo
AU - Hwang, Cheol Seong
N1 - Publisher Copyright:
© 2014 Springer Science+Business Media New York. All rights are reserved.
PY - 2014/7/1
Y1 - 2014/7/1
N2 - The type of metal precursors and oxygen sources in atomic layer deposition (ALD) crucially affect the bulk properties of high-k gate dielectric films and the interface properties with a substrate, which determines the performance and reliability of logic devices. In this chapter, we review the effect of the assorted metal precursors, such as HfCl4, (HfN(CH3)2)4, Hf(N(C2H5)(CH3))4, and HfOtBu(NEtMe)3 on the various film properties, focusing on the film growth behavior, impurity level, and interface properties. The influences of oxygen sources type, H2O and O3, are also covered. The combination of ALD high-k film with high-mobility Ge or III-V compound semiconductors results in even more complicated interface reactions as compared to the conventional Si substrate, which is also discussed. Finally, various state-of-the-art devices with ALD high-k film such as Ge and III-Vs-based metal-oxide-semiconductor field effect transistors (MOSFETs) and three-dimensional MOSFETs are introduced, and their reliability characteristics are discussed.
AB - The type of metal precursors and oxygen sources in atomic layer deposition (ALD) crucially affect the bulk properties of high-k gate dielectric films and the interface properties with a substrate, which determines the performance and reliability of logic devices. In this chapter, we review the effect of the assorted metal precursors, such as HfCl4, (HfN(CH3)2)4, Hf(N(C2H5)(CH3))4, and HfOtBu(NEtMe)3 on the various film properties, focusing on the film growth behavior, impurity level, and interface properties. The influences of oxygen sources type, H2O and O3, are also covered. The combination of ALD high-k film with high-mobility Ge or III-V compound semiconductors results in even more complicated interface reactions as compared to the conventional Si substrate, which is also discussed. Finally, various state-of-the-art devices with ALD high-k film such as Ge and III-Vs-based metal-oxide-semiconductor field effect transistors (MOSFETs) and three-dimensional MOSFETs are introduced, and their reliability characteristics are discussed.
UR - http://www.scopus.com/inward/record.url?scp=84949177083&partnerID=8YFLogxK
U2 - 10.1007/978-1-4614-8054-9_7
DO - 10.1007/978-1-4614-8054-9_7
M3 - Chapter
AN - SCOPUS:84949177083
SN - 1461480531
SN - 9781461480532
VL - 9781461480549
SP - 175
EP - 208
BT - Atomic Layer Deposition for Semiconductors
PB - Springer US
ER -