@inproceedings{72b4e5ac6b2e46399f7c0cb24c775a2f,
title = "Fully Integrated CMOS Wideband Power Amplifier for Fifth Generation Mobile Communications",
abstract = "This paper describes a power amplifier(PA) that performs frequency range 2(FR2) for fifth generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with two-stage cascode architecture achieved a small signal gain of 29.2 dB, the output 1-dB compression power (OP1dB) of 20.35 dBm, and the power added efficiency at peak power of 27.1\% at 28 GHz under 2.2-V supply voltage. At 29GHz the small signal gain is 28.8 dB, the OP1dB is 20.29 dBm, and the power-added efficiency at peak power is 26.9\% under 2.2-V supply voltage.",
keywords = "5th generation mobile communication, beam-former, CMOS 65nm, power amplifier",
author = "Bonghyuk Park and Lee, \{Hui Dong\} and Seunghyun Jang and Sunwoo Kong and Seunghun Wang and Hwang, \{Jung Hwan\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Technical Conference on Circuits/Systems, Computers, and Communications, ITC-CSCC 2023 ; Conference date: 25-06-2023 Through 28-06-2023",
year = "2023",
doi = "10.1109/ITC-CSCC58803.2023.10212682",
language = "English",
series = "2023 International Technical Conference on Circuits/Systems, Computers, and Communications, ITC-CSCC 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International Technical Conference on Circuits/Systems, Computers, and Communications, ITC-CSCC 2023",
}