Abstract
A Colpitts oscillator that generates signal at 589 GHz using both phase superposition and nonlinearities of components is demonstrated in a 0.12 μm SiGe BiCMOS process. This approach increases the ratio between fourth and second order harmonic power levels by more than 2 dB compared to that obtained using only linear phase superposition. The output power of this circuit with the highest operating frequency for transistor based signal generators is -37.7 dBm.
| Original language | English |
|---|---|
| Article number | 5559335 |
| Pages (from-to) | 554-556 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 20 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 2010 |
Keywords
- Colpitts oscillator
- on-chip patch antenna
- SiGe