Geometrical study of MOSFET for improved stress sensitivity

Jaewan Ahn; Sang H. Lee; Wonkyu Moon

doi:10.1109/IMNC.2007.4456254

Geometrical study of MOSFET for improved stress sensitivity

Jaewan Ahn
, Sang H. Lee
, Wonkyu Moon

Dept. of Mechanical & Automotive Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We design and investigate the geometrical effects of MOSFET for the better stress sensitivity. From the results, the better sensitivity is achieved with the smaller gate channel length and the gate channel width containing the high stress density, and the longitudinal direction.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages	362-363
Number of pages	2
DOIs	https://doi.org/10.1109/IMNC.2007.4456254
State	Published - 2007
Event	s20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan Duration: 5 Nov 2007 → 8 Nov 2007

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Conference

Conference	s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Country/Territory	Japan
City	Kyoto
Period	5/11/07 → 8/11/07

Access to Document

10.1109/IMNC.2007.4456254

Cite this

Ahn, J., Lee, S. H., & Moon, W. (2007). Geometrical study of MOSFET for improved stress sensitivity. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 362-363). Article 4456254 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456254

Ahn, Jaewan ; Lee, Sang H. ; Moon, Wonkyu. / Geometrical study of MOSFET for improved stress sensitivity. Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. pp. 362-363 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

@inproceedings{b3e42f51da3f467e9e97f50d56a1a2a5,

title = "Geometrical study of MOSFET for improved stress sensitivity",

abstract = "We design and investigate the geometrical effects of MOSFET for the better stress sensitivity. From the results, the better sensitivity is achieved with the smaller gate channel length and the gate channel width containing the high stress density, and the longitudinal direction.",

author = "Jaewan Ahn and Lee, \{Sang H.\} and Wonkyu Moon",

year = "2007",

doi = "10.1109/IMNC.2007.4456254",

language = "English",

isbn = "4990247248",

series = "Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC",

pages = "362--363",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC",

note = "s20th International Microprocesses and Nanotechnology Conference, MNC 2007 ; Conference date: 05-11-2007 Through 08-11-2007",

}

Ahn, J, Lee, SH & Moon, W 2007, Geometrical study of MOSFET for improved stress sensitivity. in Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC., 4456254, Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp. 362-363, s20th International Microprocesses and Nanotechnology Conference, MNC 2007, Kyoto, Japan, 5/11/07. https://doi.org/10.1109/IMNC.2007.4456254

Geometrical study of MOSFET for improved stress sensitivity. / Ahn, Jaewan; Lee, Sang H.; Moon, Wonkyu.
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 362-363 4456254 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Geometrical study of MOSFET for improved stress sensitivity

AU - Ahn, Jaewan

AU - Lee, Sang H.

AU - Moon, Wonkyu

PY - 2007

Y1 - 2007

N2 - We design and investigate the geometrical effects of MOSFET for the better stress sensitivity. From the results, the better sensitivity is achieved with the smaller gate channel length and the gate channel width containing the high stress density, and the longitudinal direction.

AB - We design and investigate the geometrical effects of MOSFET for the better stress sensitivity. From the results, the better sensitivity is achieved with the smaller gate channel length and the gate channel width containing the high stress density, and the longitudinal direction.

UR - https://www.scopus.com/pages/publications/47349087192

U2 - 10.1109/IMNC.2007.4456254

DO - 10.1109/IMNC.2007.4456254

M3 - Conference contribution

AN - SCOPUS:47349087192

SN - 4990247248

SN - 9784990247249

T3 - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

SP - 362

EP - 363

BT - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

T2 - s20th International Microprocesses and Nanotechnology Conference, MNC 2007

Y2 - 5 November 2007 through 8 November 2007

ER -

Ahn J, Lee SH, Moon W. Geometrical study of MOSFET for improved stress sensitivity. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 362-363. 4456254. (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). doi: 10.1109/IMNC.2007.4456254

Geometrical study of MOSFET for improved stress sensitivity

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