Germanium Compounds Containing Ge- =E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

Hyo Suk Kim, Eun Ae Jung, Seong Ho Han, Jeong Hwan Han, Bo Keun Park, Chang Gyoun Kim, Taek Mo Chung

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19 Scopus citations

Abstract

New germanium chalcogenide precursors, S- =Ge(dmamp)2 (3), S- =Ge(dmampS)2 (4), Se- =Ge(dmamp)2 (5), Se- =Ge(dmampS)2 (6), Te- =Ge(dmamp)2 (7), and Te- =Ge(dmampS)2 (8), were synthesized from Ge(dmamp)2 (1) and Ge(dmampS)2 (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl2·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.

Original languageEnglish
Pages (from-to)4084-4092
Number of pages9
JournalInorganic Chemistry
Volume56
Issue number7
DOIs
StatePublished - 3 Apr 2017

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