Germanium Compounds Containing Ge- =E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

Hyo Suk Kim; Eun Ae Jung; Seong Ho Han; Jeong Hwan Han; Bo Keun Park; Chang Gyoun Kim; Taek Mo Chung

doi:10.1021/acs.inorgchem.6b02697

Germanium Compounds Containing Ge- =E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

Hyo Suk Kim
, Eun Ae Jung
, Seong Ho Han
, Jeong Hwan Han
, Bo Keun Park
, Chang Gyoun Kim
, Taek Mo Chung

Dept. of Materials Science & Engineering

Korea Research Institute of Chemical Technology

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

New germanium chalcogenide precursors, S- =Ge(dmamp)₂ (3), S- =Ge(dmampS)₂ (4), Se- =Ge(dmamp)₂ (5), Se- =Ge(dmampS)₂ (6), Te- =Ge(dmamp)₂ (7), and Te- =Ge(dmampS)₂ (8), were synthesized from Ge(dmamp)₂ (1) and Ge(dmampS)₂ (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl₂·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.

Original language	English
Pages (from-to)	4084-4092
Number of pages	9
Journal	Inorganic Chemistry
Volume	56
Issue number	7
DOIs	https://doi.org/10.1021/acs.inorgchem.6b02697
State	Published - 3 Apr 2017

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title = "Germanium Compounds Containing Ge- =E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials",

abstract = "New germanium chalcogenide precursors, S- =Ge(dmamp)2 (3), S- =Ge(dmampS)2 (4), Se- =Ge(dmamp)2 (5), Se- =Ge(dmampS)2 (6), Te- =Ge(dmamp)2 (7), and Te- =Ge(dmampS)2 (8), were synthesized from Ge(dmamp)2 (1) and Ge(dmampS)2 (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl2·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.",

author = "Kim, \{Hyo Suk\} and Jung, \{Eun Ae\} and Han, \{Seong Ho\} and Han, \{Jeong Hwan\} and Park, \{Bo Keun\} and Kim, \{Chang Gyoun\} and Chung, \{Taek Mo\}",

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doi = "10.1021/acs.inorgchem.6b02697",

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T1 - Germanium Compounds Containing Ge- =E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

AU - Kim, Hyo Suk

AU - Jung, Eun Ae

AU - Han, Seong Ho

AU - Han, Jeong Hwan

AU - Park, Bo Keun

AU - Kim, Chang Gyoun

AU - Chung, Taek Mo

PY - 2017/4/3

Y1 - 2017/4/3

N2 - New germanium chalcogenide precursors, S- =Ge(dmamp)2 (3), S- =Ge(dmampS)2 (4), Se- =Ge(dmamp)2 (5), Se- =Ge(dmampS)2 (6), Te- =Ge(dmamp)2 (7), and Te- =Ge(dmampS)2 (8), were synthesized from Ge(dmamp)2 (1) and Ge(dmampS)2 (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl2·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.

AB - New germanium chalcogenide precursors, S- =Ge(dmamp)2 (3), S- =Ge(dmampS)2 (4), Se- =Ge(dmamp)2 (5), Se- =Ge(dmampS)2 (6), Te- =Ge(dmamp)2 (7), and Te- =Ge(dmampS)2 (8), were synthesized from Ge(dmamp)2 (1) and Ge(dmampS)2 (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl2·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.

UR - https://www.scopus.com/pages/publications/85016963777

U2 - 10.1021/acs.inorgchem.6b02697

DO - 10.1021/acs.inorgchem.6b02697

M3 - Article

C2 - 28326773

AN - SCOPUS:85016963777

SN - 0020-1669

VL - 56

SP - 4084

EP - 4092

JO - Inorganic Chemistry

JF - Inorganic Chemistry

IS - 7

ER -

Germanium Compounds Containing Ge- =E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

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