Gradient doping of Mg in p-type GaN for high efficiency InGaN-GaN ultraviolet light-emitting diode

Min Ki Kwon; Il Kyu Park; Ja Yeon Kim; Jeom Oh Kim; Bongjin Kim; Seong Ju Park

doi:10.1109/LPT.2007.908659

Gradient doping of Mg in p-type GaN for high efficiency InGaN-GaN ultraviolet light-emitting diode

Min Ki Kwon, Il Kyu Park, Ja Yeon Kim, Jeom Oh Kim, Bongjin Kim, Seong Ju Park

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The performance of a InGaN-GaN multiple quantum-well (MQW) ultraviolet (UV) light-emitting diode (LED) with an emission of 385 nm was enhanced by a gradient doping of Mg in the p-GaN layer. The optical output power was enhanced by 21% at an input current of 20 mA compared to that of a UV LED with a uniformly doped p-GaN layer. The improved performance of the UV LED could be attributed to the decrease in diffusion of Mg into MQW and the suppression of electron transport from the conduction band of the MQW to the acceptor level of the deep donor acceptor pair bands in the p-GaN layer by a gradient doping of Mg in p-GaN layer.

Original language	English
Pages (from-to)	1880-1882
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2007.908659
State	Published - 1 Dec 2007

Keywords

(In)GaN
Doping
Gallium nitride
Light emitting diodes
Light-emitting diode (LED)
Near ultraviolet (UV)
Quantum well devices
Temperature distribution

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10.1109/LPT.2007.908659

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title = "Gradient doping of Mg in p-type GaN for high efficiency InGaN-GaN ultraviolet light-emitting diode",

abstract = "The performance of a InGaN-GaN multiple quantum-well (MQW) ultraviolet (UV) light-emitting diode (LED) with an emission of 385 nm was enhanced by a gradient doping of Mg in the p-GaN layer. The optical output power was enhanced by 21\% at an input current of 20 mA compared to that of a UV LED with a uniformly doped p-GaN layer. The improved performance of the UV LED could be attributed to the decrease in diffusion of Mg into MQW and the suppression of electron transport from the conduction band of the MQW to the acceptor level of the deep donor acceptor pair bands in the p-GaN layer by a gradient doping of Mg in p-GaN layer.",

keywords = "(In)GaN, Doping, Gallium nitride, Light emitting diodes, Light-emitting diode (LED), Near ultraviolet (UV), Quantum well devices, Temperature distribution",

author = "Kwon, \{Min Ki\} and Park, \{Il Kyu\} and Kim, \{Ja Yeon\} and Kim, \{Jeom Oh\} and Bongjin Kim and Park, \{Seong Ju\}",

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T1 - Gradient doping of Mg in p-type GaN for high efficiency InGaN-GaN ultraviolet light-emitting diode

AU - Kwon, Min Ki

AU - Park, Il Kyu

AU - Kim, Ja Yeon

AU - Kim, Jeom Oh

AU - Kim, Bongjin

AU - Park, Seong Ju

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The performance of a InGaN-GaN multiple quantum-well (MQW) ultraviolet (UV) light-emitting diode (LED) with an emission of 385 nm was enhanced by a gradient doping of Mg in the p-GaN layer. The optical output power was enhanced by 21% at an input current of 20 mA compared to that of a UV LED with a uniformly doped p-GaN layer. The improved performance of the UV LED could be attributed to the decrease in diffusion of Mg into MQW and the suppression of electron transport from the conduction band of the MQW to the acceptor level of the deep donor acceptor pair bands in the p-GaN layer by a gradient doping of Mg in p-GaN layer.

AB - The performance of a InGaN-GaN multiple quantum-well (MQW) ultraviolet (UV) light-emitting diode (LED) with an emission of 385 nm was enhanced by a gradient doping of Mg in the p-GaN layer. The optical output power was enhanced by 21% at an input current of 20 mA compared to that of a UV LED with a uniformly doped p-GaN layer. The improved performance of the UV LED could be attributed to the decrease in diffusion of Mg into MQW and the suppression of electron transport from the conduction band of the MQW to the acceptor level of the deep donor acceptor pair bands in the p-GaN layer by a gradient doping of Mg in p-GaN layer.

KW - (In)GaN

KW - Doping

KW - Gallium nitride

KW - Light emitting diodes

KW - Light-emitting diode (LED)

KW - Near ultraviolet (UV)

KW - Quantum well devices

KW - Temperature distribution

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U2 - 10.1109/LPT.2007.908659

DO - 10.1109/LPT.2007.908659

M3 - Article

AN - SCOPUS:38049141296

SN - 1041-1135

VL - 19

SP - 1880

EP - 1882

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 23

ER -

Gradient doping of Mg in p-type GaN for high efficiency InGaN-GaN ultraviolet light-emitting diode

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