TY - JOUR
T1 - Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices
AU - Baek, Myung Hyun
AU - Jang, Taejin
AU - Kim, Hyungjin
AU - Park, Jungjin
AU - Kwon, Min Woo
AU - Hwang, Sungmin
AU - Kim, Suhyeon
AU - Lee, Jeong Jun
AU - Park, Byung Gook
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - In this paper, we investigate the floating body effect (FBE) in fully depleted polysilicon-body ultrathin-body MOSFETs. Generally, the FBE cannot occur in a fully depleted body. However, we demonstrate that an FBE-like phenomenon can be observed in fully depleted polysilicon-body MOSFETs due to the grain boundaries of the polysilicon. To analyze this, devices with various conditions were fabricated and measured. As a result, we may argue that generated holes can be trapped at grain boundaries, which causes an FBE-like phenomenon. Based on this, we expect that thin-polysilicon devices can be utilized for various applications such as 1T-DRAM or synaptic devices.
AB - In this paper, we investigate the floating body effect (FBE) in fully depleted polysilicon-body ultrathin-body MOSFETs. Generally, the FBE cannot occur in a fully depleted body. However, we demonstrate that an FBE-like phenomenon can be observed in fully depleted polysilicon-body MOSFETs due to the grain boundaries of the polysilicon. To analyze this, devices with various conditions were fabricated and measured. As a result, we may argue that generated holes can be trapped at grain boundaries, which causes an FBE-like phenomenon. Based on this, we expect that thin-polysilicon devices can be utilized for various applications such as 1T-DRAM or synaptic devices.
UR - https://www.scopus.com/pages/publications/85073227266
U2 - 10.7567/1347-4065/ab3e2c
DO - 10.7567/1347-4065/ab3e2c
M3 - Article
AN - SCOPUS:85073227266
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 10
M1 - 101004
ER -