Green light-emitting diodes with self-assembled In-rich InGaN quantum dots

Il Kyu Park, Min Ki Kwon, Jeom Oh Kim, Seong Bum Seo, Ja Yeon Kim, Jae Hong Lim, Seong Ju Park, Yoon Seok Kim

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75 Scopus citations

Abstract

A green light-emitting diode (LED) was fabricated using self-assembled In-rich InGaN quantum dots (QDs). The photoluminescence studies showed that the QDs provide thermally stable deeply localized recombination sites for carriers with negligibly small piezoelectric field. The electroluminescence spectra of the LED showed a peak in the green spectral range and the dominant peak was blueshifted with increasing injection current due to the distribution of depth of the potential wells of QDs. The output power of the LED increased with increasing injection current, indicating that the potential wells are thermally stable and deeply localized in the QDs.

Original languageEnglish
Article number133105
JournalApplied Physics Letters
Volume91
Issue number13
DOIs
StatePublished - 2007

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