Ground state energy levels of indium arsenide quantum dots calculated by a single band effective mass model using representative strained input properties

Representative strained values of effective mass and potential of charge carriers in indium arsenide (InAs) quantum dots have been used as input to the complete orthonormal set approach of an effective-mass, single-band, and constant-potential model for the calculation of the ground state energy levels. Even with the avoidance of the diagonalization of the strain Hamiltonian matrix, the single-band-model-calculated ground state energy levels are reasonably refined by the use of representative strained values of potential and effective mass.