TY - JOUR
T1 - Growth and phase separation behavior in Ge-doped Sb-Te thin films deposited by combined plasma-enhanced chemical vapor and atomic layer depositions
AU - Choi, Seol
AU - Choi, Byung Joon
AU - Eom, Taeyong
AU - Jang, Jae Hyuck
AU - Lee, Woongkyu
AU - Hwang, Cheol Seong
PY - 2010/10/21
Y1 - 2010/10/21
N2 - The growth, phase separation, crystallization behavior, and electrical properties of various Ge-doped Sb-Te thin films were examined. The films were deposited by combined plasma-enhanced chemical vapor and atomic layer depositions at a wafer temperature of 150 °C using Ge(i-C4H 9)4, Sb(i-C3H7)3, and Te(i-C3H7)2 as the precursors for Ge, Sb, and Te, respectively. The different compositions were obtained by adjusting the Ge and Sb precursor injection times. Segregated crystalline Sb islands were observed in amorphous Sb-rich Sb-Te thin films containing over 10 atom % of Ge. The crystallization kinetics of the Ge-doped SbTe alloys, which depends on the concentration ratio of Sb/Te and the bond energy between Ge, Sb, and Te, provide clues to help understand the phase separation behavior of the films at growth temperature. Ge17Sb58Te25 and Ge 31Sb38Te31 showed the highest resistivity of 67 Ω cm at the as-deposited state and exhibited a crystallization temperature of ∼260 °C.
AB - The growth, phase separation, crystallization behavior, and electrical properties of various Ge-doped Sb-Te thin films were examined. The films were deposited by combined plasma-enhanced chemical vapor and atomic layer depositions at a wafer temperature of 150 °C using Ge(i-C4H 9)4, Sb(i-C3H7)3, and Te(i-C3H7)2 as the precursors for Ge, Sb, and Te, respectively. The different compositions were obtained by adjusting the Ge and Sb precursor injection times. Segregated crystalline Sb islands were observed in amorphous Sb-rich Sb-Te thin films containing over 10 atom % of Ge. The crystallization kinetics of the Ge-doped SbTe alloys, which depends on the concentration ratio of Sb/Te and the bond energy between Ge, Sb, and Te, provide clues to help understand the phase separation behavior of the films at growth temperature. Ge17Sb58Te25 and Ge 31Sb38Te31 showed the highest resistivity of 67 Ω cm at the as-deposited state and exhibited a crystallization temperature of ∼260 °C.
UR - https://www.scopus.com/pages/publications/77957995852
U2 - 10.1021/jp107282z
DO - 10.1021/jp107282z
M3 - Article
AN - SCOPUS:77957995852
SN - 1932-7447
VL - 114
SP - 17899
EP - 17904
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 41
ER -