TY - JOUR
T1 - Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD
AU - Yang, C. M.
AU - Uehara, K.
AU - Aota, Y.
AU - Kim, S. K.
AU - Kameda, S.
AU - Nakase, Y.
AU - Isota,
AU - Tsubouchi, K.
PY - 2004
Y1 - 2004
N2 - We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.
AB - We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.
UR - https://www.scopus.com/pages/publications/21644448217
M3 - Conference article
AN - SCOPUS:21644448217
SN - 1051-0117
VL - 1
SP - 165
EP - 168
JO - Proceedings of the IEEE Ultrasonics Symposium
JF - Proceedings of the IEEE Ultrasonics Symposium
T2 - 2004 IEEE Ultrasonics Symposium
Y2 - 23 August 2004 through 27 August 2004
ER -