Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD

C. M. Yang; K. Uehara; Y. Aota; S. K. Kim; S. Kameda; Y. Nakase; Isota; K. Tsubouchi

Growth of AlN film on Mo/SiO₂/Si (111) for 5GHz-band FBAR using MOCVD

C. M. Yang
, K. Uehara
, Y. Aota
, S. K. Kim
, S. Kameda
, Y. Nakase
, Isota
, K. Tsubouchi

Dept. of Information Technology and Media Engineering

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO₂/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10^-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO₂/Si (100) and Mo/SiO₂/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

Original language	English
Pages (from-to)	165-168
Number of pages	4
Journal	Proceedings of the IEEE Ultrasonics Symposium
Volume	1
State	Published - 2004
Event	2004 IEEE Ultrasonics Symposium - Montreal, Que., Canada Duration: 23 Aug 2004 → 27 Aug 2004

Cite this

@article{40e1ddb68f674f05a693f59c201da4b3,

title = "Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD",

abstract = "We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65\%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.",

author = "Yang, \{C. M.\} and K. Uehara and Y. Aota and Kim, \{S. K.\} and S. Kameda and Y. Nakase and Isota and K. Tsubouchi",

year = "2004",

language = "English",

volume = "1",

pages = "165--168",

journal = "Proceedings of the IEEE Ultrasonics Symposium",

issn = "1051-0117",

note = "2004 IEEE Ultrasonics Symposium ; Conference date: 23-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD

AU - Yang, C. M.

AU - Uehara, K.

AU - Aota, Y.

AU - Kim, S. K.

AU - Kameda, S.

AU - Nakase, Y.

AU - Isota,

AU - Tsubouchi, K.

PY - 2004

Y1 - 2004

N2 - We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

AB - We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

UR - https://www.scopus.com/pages/publications/21644448217

M3 - Conference article

AN - SCOPUS:21644448217

SN - 1051-0117

VL - 1

SP - 165

EP - 168

JO - Proceedings of the IEEE Ultrasonics Symposium

JF - Proceedings of the IEEE Ultrasonics Symposium

T2 - 2004 IEEE Ultrasonics Symposium

Y2 - 23 August 2004 through 27 August 2004

ER -

Growth of AlN film on Mo/SiO₂/Si (111) for 5GHz-band FBAR using MOCVD

Abstract

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