Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers

Jeong Hwan Han; Woongkyu Lee; Woojin Jeon; Sang Woon Lee; Cheol Seong Hwang; Changhee Ko; Julien Gatineau

doi:10.1021/cm302470k

Growth of conductive SrRuO₃ films by combining atomic layer deposited SrO and chemical vapor deposited RuO₂ layers

Jeong Hwan Han, Woongkyu Lee, Woojin Jeon, Sang Woon Lee, Cheol Seong Hwang, Changhee Ko, Julien Gatineau

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

SrRuO₃ (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO₂ layers at a low growth temperature of 230 C using Sr(ⁱPr ₃Cp)₂, RuO₄ precursors, and O₂ gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO₂ subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N₂ ambient at temperatures ranging from 600 to 700 C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO₃ (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.

Original language	English
Pages (from-to)	4686-4692
Number of pages	7
Journal	Chemistry of Materials
Volume	24
Issue number	24
DOIs	https://doi.org/10.1021/cm302470k
State	Published - 21 Dec 2012

Keywords

atomic layer deposition
chemical vapor deposition
DRAM
RuO
Sr(iPrCp)
SrRuO
SrTiO

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@article{a7cb41da057f406e9aed80a7670645b2,

title = "Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers",

abstract = "SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 C using Sr(iPr 3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO2 subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N2 ambient at temperatures ranging from 600 to 700 C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO3 (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.",

keywords = "atomic layer deposition, chemical vapor deposition, DRAM, RuO, Sr(iPrCp), SrRuO, SrTiO",

author = "Han, \{Jeong Hwan\} and Woongkyu Lee and Woojin Jeon and Lee, \{Sang Woon\} and Hwang, \{Cheol Seong\} and Changhee Ko and Julien Gatineau",

year = "2012",

month = dec,

day = "21",

doi = "10.1021/cm302470k",

language = "English",

volume = "24",

pages = "4686--4692",

journal = "Chemistry of Materials",

issn = "0897-4756",

number = "24",

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TY - JOUR

T1 - Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers

AU - Han, Jeong Hwan

AU - Lee, Woongkyu

AU - Jeon, Woojin

AU - Lee, Sang Woon

AU - Hwang, Cheol Seong

AU - Ko, Changhee

AU - Gatineau, Julien

PY - 2012/12/21

Y1 - 2012/12/21

N2 - SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 C using Sr(iPr 3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO2 subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N2 ambient at temperatures ranging from 600 to 700 C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO3 (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.

AB - SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 C using Sr(iPr 3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO2 subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N2 ambient at temperatures ranging from 600 to 700 C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO3 (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.

KW - atomic layer deposition

KW - chemical vapor deposition

KW - DRAM

KW - RuO

KW - Sr(iPrCp)

KW - SrRuO

KW - SrTiO

UR - https://www.scopus.com/pages/publications/84871557690

U2 - 10.1021/cm302470k

DO - 10.1021/cm302470k

M3 - Article

AN - SCOPUS:84871557690

SN - 0897-4756

VL - 24

SP - 4686

EP - 4692

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 24

ER -

Growth of conductive SrRuO₃ films by combining atomic layer deposited SrO and chemical vapor deposited RuO₂ layers

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Keywords

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