Abstract
Multilayer graphene is considered a promising material for various optoelectronic devices. To exploit its intriguing electronic properties, an electric field must be achieved inside this material. However, creation of a desired electric field in multilayer graphene is difficult because any external electric field is mostly screened by its outermost surface. Here, we report a one-step chemical vapor deposition method for the synthesis of Bernal-like stacked graphene with a built-in vertical electric field that can be tuned over a wide range. This method can be used to control the optoelectronic properties of graphene in the synthesis stage. Owing to this built-in vertical electric field and Bernal-like stacking, the synthesized graphene exhibits vertical photovoltaic effects, which is very promising for various optoelectronic applications.
| Original language | English |
|---|---|
| Pages (from-to) | 5142-5152 |
| Number of pages | 11 |
| Journal | Chemistry of Materials |
| Volume | 32 |
| Issue number | 12 |
| DOIs | |
| State | Published - 23 Jun 2020 |