Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Jeong Hwan Han; Hyo Yeon Kim; Sang Chan Lee; Da Hye Kim; Bo Keun Park; Jin Seong Park; Dong Ju Jeon; Taek Mo Chung; Chang Gyoun Kim

doi:10.1016/j.apsusc.2015.11.095

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Jeong Hwan Han, Hyo Yeon Kim, Sang Chan Lee, Da Hye Kim, Bo Keun Park, Jin Seong Park, Dong Ju Jeon, Taek Mo Chung, Chang Gyoun Kim

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH ₃ plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm ³ at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

Original language	English
Pages (from-to)	176-181
Number of pages	6
Journal	Applied Surface Science
Volume	362
DOIs	https://doi.org/10.1016/j.apsusc.2015.11.095
State	Published - 30 Jan 2016

Keywords

Copper diffusion barrier
Metal-organic precursor
Plasma-enhanced atomic layer deposition
Tantalum nitride

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10.1016/j.apsusc.2015.11.095

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Han, J. H., Kim, H. Y., Lee, S. C., Kim, D. H., Park, B. K., Park, J. S., Jeon, D. J., Chung, T. M., & Kim, C. G. (2016). Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex. Applied Surface Science, 362, 176-181. https://doi.org/10.1016/j.apsusc.2015.11.095

@article{8a2bef6234714966948acc287a4e63b8,

title = "Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex",

abstract = " A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH 3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm 3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4\%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.",

keywords = "Copper diffusion barrier, Metal-organic precursor, Plasma-enhanced atomic layer deposition, Tantalum nitride",

author = "Han, \{Jeong Hwan\} and Kim, \{Hyo Yeon\} and Lee, \{Sang Chan\} and Kim, \{Da Hye\} and Park, \{Bo Keun\} and Park, \{Jin Seong\} and Jeon, \{Dong Ju\} and Chung, \{Taek Mo\} and Kim, \{Chang Gyoun\}",

year = "2016",

month = jan,

day = "30",

doi = "10.1016/j.apsusc.2015.11.095",

language = "English",

volume = "362",

pages = "176--181",

journal = "Applied Surface Science",

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}

Han, JH, Kim, HY, Lee, SC, Kim, DH, Park, BK, Park, JS, Jeon, DJ, Chung, TM & Kim, CG 2016, 'Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex', Applied Surface Science, vol. 362, pp. 176-181. https://doi.org/10.1016/j.apsusc.2015.11.095

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex. / Han, Jeong Hwan; Kim, Hyo Yeon; Lee, Sang Chan et al.
In: Applied Surface Science, Vol. 362, 30.01.2016, p. 176-181.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

AU - Han, Jeong Hwan

AU - Kim, Hyo Yeon

AU - Lee, Sang Chan

AU - Kim, Da Hye

AU - Park, Bo Keun

AU - Park, Jin Seong

AU - Jeon, Dong Ju

AU - Chung, Taek Mo

AU - Kim, Chang Gyoun

PY - 2016/1/30

Y1 - 2016/1/30

N2 - A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH 3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm 3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

AB - A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH 3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm 3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

KW - Copper diffusion barrier

KW - Metal-organic precursor

KW - Plasma-enhanced atomic layer deposition

KW - Tantalum nitride

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DO - 10.1016/j.apsusc.2015.11.095

M3 - Article

AN - SCOPUS:84959502411

SN - 0169-4332

VL - 362

SP - 176

EP - 181

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

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