Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Jeong Hwan Han; Hyo Yeon Kim; Sang Chan Lee; Da Hye Kim; Bo Keun Park; Jin Seong Park; Dong Ju Jeon; Taek Mo Chung; Chang Gyoun Kim

doi:10.1016/j.apsusc.2015.11.095

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Jeong Hwan Han
, Hyo Yeon Kim
, Sang Chan Lee
, Da Hye Kim
, Bo Keun Park
, Jin Seong Park
, Dong Ju Jeon
, Taek Mo Chung
, Chang Gyoun Kim

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH ₃ plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm ³ at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

Original language	English
Pages (from-to)	176-181
Number of pages	6
Journal	Applied Surface Science
Volume	362
DOIs	https://doi.org/10.1016/j.apsusc.2015.11.095
State	Published - 30 Jan 2016

Keywords

Copper diffusion barrier
Metal-organic precursor
Plasma-enhanced atomic layer deposition
Tantalum nitride

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10.1016/j.apsusc.2015.11.095

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Han, J. H., Kim, H. Y., Lee, S. C., Kim, D. H., Park, B. K., Park, J. S., Jeon, D. J., Chung, T. M., & Kim, C. G. (2016). Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex. Applied Surface Science, 362, 176-181. https://doi.org/10.1016/j.apsusc.2015.11.095

@article{8a2bef6234714966948acc287a4e63b8,

title = "Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex",

abstract = " A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH 3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm 3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4\%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.",

keywords = "Copper diffusion barrier, Metal-organic precursor, Plasma-enhanced atomic layer deposition, Tantalum nitride",

author = "Han, \{Jeong Hwan\} and Kim, \{Hyo Yeon\} and Lee, \{Sang Chan\} and Kim, \{Da Hye\} and Park, \{Bo Keun\} and Park, \{Jin Seong\} and Jeon, \{Dong Ju\} and Chung, \{Taek Mo\} and Kim, \{Chang Gyoun\}",

year = "2016",

month = jan,

day = "30",

doi = "10.1016/j.apsusc.2015.11.095",

language = "English",

volume = "362",

pages = "176--181",

journal = "Applied Surface Science",

issn = "0169-4332",

}

Han, JH, Kim, HY, Lee, SC, Kim, DH, Park, BK, Park, JS, Jeon, DJ, Chung, TM & Kim, CG 2016, 'Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex', Applied Surface Science, vol. 362, pp. 176-181. https://doi.org/10.1016/j.apsusc.2015.11.095

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex. / Han, Jeong Hwan; Kim, Hyo Yeon; Lee, Sang Chan et al.
In: Applied Surface Science, Vol. 362, 30.01.2016, p. 176-181.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

AU - Han, Jeong Hwan

AU - Kim, Hyo Yeon

AU - Lee, Sang Chan

AU - Kim, Da Hye

AU - Park, Bo Keun

AU - Park, Jin Seong

AU - Jeon, Dong Ju

AU - Chung, Taek Mo

AU - Kim, Chang Gyoun

PY - 2016/1/30

Y1 - 2016/1/30

N2 - A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH 3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm 3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

AB - A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH 3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm 3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

KW - Copper diffusion barrier

KW - Metal-organic precursor

KW - Plasma-enhanced atomic layer deposition

KW - Tantalum nitride

UR - https://www.scopus.com/pages/publications/84959502411

U2 - 10.1016/j.apsusc.2015.11.095

DO - 10.1016/j.apsusc.2015.11.095

M3 - Article

AN - SCOPUS:84959502411

SN - 0169-4332

VL - 362

SP - 176

EP - 181

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

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