Growth temperature effect of atomic-layer-deposited GdOx films

Sung Yeon Ryu; Hee Ju Yun; Min Hwan Lee; Byung Joon Choi

doi:10.24425/amm.2021.136375

Growth temperature effect of atomic-layer-deposited GdO_x films

Sung Yeon Ryu, Hee Ju Yun, Min Hwan Lee, Byung Joon Choi

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Gadolinium oxide (gd₂o₃) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. in this work, gdo_x thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based gd precursor and water. As-grown gdo_x film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick gdo_x thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown gdo_x film.

Original language	English
Pages (from-to)	755-758
Number of pages	4
Journal	Archives of Metallurgy and Materials
Volume	66
Issue number	3
DOIs	https://doi.org/10.24425/amm.2021.136375
State	Published - 2021

Keywords

Atomic layer deposition
Electrical property
Gadolinium oxide (gdo)
Hydrophobicity
Rare-earth oxide

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10.24425/amm.2021.136375

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@article{31bbdaa267a0436f8a94ac01957e499f,

title = "Growth temperature effect of atomic-layer-deposited GdOx films",

abstract = "Gadolinium oxide (gd2o3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. in this work, gdox thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based gd precursor and water. As-grown gdox film was amorphous and had a sub-stoichiometric (x \textasciitilde{} 1.2) composition with a uniform elemental depth profile. \textasciitilde{}3 nm-thick gdox thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown gdox film.",

keywords = "Atomic layer deposition, Electrical property, Gadolinium oxide (gdo), Hydrophobicity, Rare-earth oxide",

author = "Ryu, \{Sung Yeon\} and Yun, \{Hee Ju\} and Lee, \{Min Hwan\} and Choi, \{Byung Joon\}",

note = "Publisher Copyright: {\textcopyright} 2021. The Author(s).",

year = "2021",

doi = "10.24425/amm.2021.136375",

language = "English",

volume = "66",

pages = "755--758",

journal = "Archives of Metallurgy and Materials",

issn = "1733-3490",

number = "3",

}

TY - JOUR

T1 - Growth temperature effect of atomic-layer-deposited GdOx films

AU - Ryu, Sung Yeon

AU - Yun, Hee Ju

AU - Lee, Min Hwan

AU - Choi, Byung Joon

PY - 2021

Y1 - 2021

N2 - Gadolinium oxide (gd2o3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. in this work, gdox thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based gd precursor and water. As-grown gdox film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick gdox thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown gdox film.

AB - Gadolinium oxide (gd2o3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. in this work, gdox thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based gd precursor and water. As-grown gdox film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick gdox thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown gdox film.

KW - Atomic layer deposition

KW - Electrical property

KW - Gadolinium oxide (gdo)

KW - Hydrophobicity

KW - Rare-earth oxide

UR - http://www.scopus.com/inward/record.url?scp=85108908960&partnerID=8YFLogxK

U2 - 10.24425/amm.2021.136375

DO - 10.24425/amm.2021.136375

M3 - Article

AN - SCOPUS:85108908960

SN - 1733-3490

VL - 66

SP - 755

EP - 758

JO - Archives of Metallurgy and Materials

JF - Archives of Metallurgy and Materials

IS - 3

ER -

Growth temperature effect of atomic-layer-deposited GdO_x films

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