High-angle tilt boundary graphene domain recrystallized from mobile hot-wire-assisted chemical vapor deposition system

Jinsup Lee, Jinwook Baek, Gyeong Hee Ryu, Mi Jin Lee, Seran Oh, Seul Ki Hong, Bo Hyun Kim, Seok Hee Lee, Byung Jin Cho, Zonghoon Lee, Seokwoo Jeon

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Crystallization of materials has attracted research interest for a long time, and its mechanisms in three-dimensional materials have been well studied. However, crystallization of two-dimensional (2D) materials is yet to be challenged. Clarifying the dynamics underlying growth of 2D materials will provide the insight for the potential route to synthesize large and highly crystallized 2D domains with low defects. Here, we present the growth dynamics and recrystallization of 2D material graphene under a mobile hot-wire assisted chemical vapor deposition (MHW-CVD) system. Under local but sequential heating by MHW-CVD system, the initial nucleation of nanocrystalline graphenes, which was not extended into the growth stage due to the insufficient thermal energy, took a recrystallization and converted into a grand single crystal domain. During this process, the stitching-like healing of graphene was also observed. The local but sequential endowing thermal energy to nanocrystalline graphenes enabled us to simultaneously reveal the recrystallization and healing dynamics in graphene growth, which suggests an alternative route to synthesize a highly crystalline and large domain size graphene. Also, this recrystallization and healing of 2D nanocrystalline graphenes offers an interesting insight on the growth mechanism of 2D materials.

Original languageEnglish
Pages (from-to)4352-4359
Number of pages8
JournalNano Letters
Volume14
Issue number8
DOIs
StatePublished - 13 Aug 2014

Keywords

  • chemical vapor deposition
  • global domain
  • graphene
  • high-angle tilt boundary
  • recrystallization

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