High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO2/Si structure

S. Li; Y. K. Lee; W. Gao; T. White; Z. L. Dong; K. Maung Latt

doi:10.1116/1.1347048

High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO₂/Si structure

S. Li
, Y. K. Lee
, W. Gao
, T. White
, Z. L. Dong
, K. Maung Latt

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO₂/Si. The individual layers were characterized by TEM, STEM, and RBS.

Original language	English
Pages (from-to)	388-396
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1347048
State	Published - Mar 2001

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@article{b4f6dd748bbc47ae91356bc1ce616431,

title = "High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5\% Cu/Ti/SiO2/Si structure",

abstract = "Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5\%Cu/Ti/SiO2/Si. The individual layers were characterized by TEM, STEM, and RBS.",

author = "S. Li and Lee, \{Y. K.\} and W. Gao and T. White and Dong, \{Z. L.\} and Latt, \{K. Maung\}",

year = "2001",

month = mar,

doi = "10.1116/1.1347048",

language = "English",

volume = "19",

pages = "388--396",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "2",

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TY - JOUR

T1 - High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO2/Si structure

AU - Li, S.

AU - Lee, Y. K.

AU - Gao, W.

AU - White, T.

AU - Dong, Z. L.

AU - Latt, K. Maung

PY - 2001/3

Y1 - 2001/3

N2 - Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO2/Si. The individual layers were characterized by TEM, STEM, and RBS.

AB - Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO2/Si. The individual layers were characterized by TEM, STEM, and RBS.

UR - https://www.scopus.com/pages/publications/0035272788

U2 - 10.1116/1.1347048

DO - 10.1116/1.1347048

M3 - Article

AN - SCOPUS:0035272788

SN - 1071-1023

VL - 19

SP - 388

EP - 396

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO₂/Si structure

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