High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

Chu Young Cho; Min Ki Kwon; Il Kyu Park; Sang Hyun Hong; Jae Joon Kim; Seong Eun Park; Sung Tae Kim; Seong Ju Park

doi:10.1364/OE.19.00A943

High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

Chu Young Cho, Min Ki Kwon, Il Kyu Park, Sang Hyun Hong, Jae Joon Kim, Seong Eun Park, Sung Tae Kim, Seong Ju Park

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED.

Original language	English
Pages (from-to)	A943-A948
Journal	Optics Express
Volume	19
Issue number	104
DOIs	https://doi.org/10.1364/OE.19.00A943
State	Published - 4 Jul 2011

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title = "High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask",

abstract = "We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60\% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED.",

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T1 - High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

AU - Cho, Chu Young

AU - Kwon, Min Ki

AU - Park, Il Kyu

AU - Hong, Sang Hyun

AU - Kim, Jae Joon

AU - Park, Seong Eun

AU - Kim, Sung Tae

AU - Park, Seong Ju

PY - 2011/7/4

Y1 - 2011/7/4

N2 - We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED.

AB - We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED.

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High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

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