High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor

Myeong Gil Chae; Jina Kim; Hee Won Jang; Bo Keun Park; Taek Mo Chung; Seong Keun Kim; Jeong Hwan Han

doi:10.1021/acsaelm.2c01107

High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor

Myeong Gil Chae, Jina Kim, Hee Won Jang, Bo Keun Park, Taek Mo Chung, Seong Keun Kim, Jeong Hwan Han

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (I_on/I_off) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13-7.24 cm²/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an I_on/I_off value of 10⁴-10⁵. Additionally, backchannel passivation by the ALD Al₂O₃ film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.

Original language	English
Pages (from-to)	1992-1999
Number of pages	8
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	4
DOIs	https://doi.org/10.1021/acsaelm.2c01107
State	Published - 25 Apr 2023

Keywords

atomic layer deposition
mobility
on/off current ratio
p-type thin-film transistor
SnO

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title = "High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor",

abstract = "High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13-7.24 cm2/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104-105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.",

keywords = "atomic layer deposition, mobility, on/off current ratio, p-type thin-film transistor, SnO",

author = "Chae, \{Myeong Gil\} and Jina Kim and Jang, \{Hee Won\} and Park, \{Bo Keun\} and Chung, \{Taek Mo\} and Kim, \{Seong Keun\} and Han, \{Jeong Hwan\}",

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doi = "10.1021/acsaelm.2c01107",

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T1 - High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor

AU - Chae, Myeong Gil

AU - Kim, Jina

AU - Jang, Hee Won

AU - Park, Bo Keun

AU - Chung, Taek Mo

AU - Kim, Seong Keun

AU - Han, Jeong Hwan

PY - 2023/4/25

Y1 - 2023/4/25

N2 - High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13-7.24 cm2/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104-105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.

AB - High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13-7.24 cm2/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104-105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.

KW - atomic layer deposition

KW - mobility

KW - on/off current ratio

KW - p-type thin-film transistor

KW - SnO

UR - https://www.scopus.com/pages/publications/85147582396

U2 - 10.1021/acsaelm.2c01107

DO - 10.1021/acsaelm.2c01107

M3 - Article

AN - SCOPUS:85147582396

SN - 2637-6113

VL - 5

SP - 1992

EP - 1999

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 4

ER -

High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor

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Keywords

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