High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Byungwook Yoo; Taeho Jung; Debarshi Basu; Ananth Dodabalapur; Brooks A. Jones; Antonio Facchetti; Michael R. Wasielewski; Tobin J. Marks

doi:10.1063/1.2177627

High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Byungwook Yoo, Taeho Jung, Debarshi Basu, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R. Wasielewski, Tobin J. Marks

Electronic Engineering Program

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

Original language	English
Article number	082104
Journal	Applied Physics Letters
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.2177627
State	Published - 2006

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title = "High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators",

abstract = "The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.",

author = "Byungwook Yoo and Taeho Jung and Debarshi Basu and Ananth Dodabalapur and Jones, \{Brooks A.\} and Antonio Facchetti and Wasielewski, \{Michael R.\} and Marks, \{Tobin J.\}",

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journal = "Applied Physics Letters",

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T1 - High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

AU - Yoo, Byungwook

AU - Jung, Taeho

AU - Basu, Debarshi

AU - Dodabalapur, Ananth

AU - Jones, Brooks A.

AU - Facchetti, Antonio

AU - Wasielewski, Michael R.

AU - Marks, Tobin J.

PY - 2006

Y1 - 2006

N2 - The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

AB - The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

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DO - 10.1063/1.2177627

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 082104

ER -

High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

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