High-performance solution-deposited n-channel organic transistors and their complementary circuits

The fabrication of high-performance solution-deposited n-channel organic transistors and their complementary circuits from a PDI-8CN₂ solution with micro-injector patterning technique were reported. The scans of vapor- and solution-deposited films indicate a significantly textured thin film microstructure where the molecular long axes are tilted at 40°. Higher annealing temperatures are found to eliminate residual solvent, oxygen, and moisture from the films and are favorable for reconstruction to more ordered film micro- and grain structures. The complementary circuits consisting of p- and n-channel transistors are ideal configuration for organic semiconductors, offering low static power dissipation. The operating frequency of the ring oscillator of a single transistor is achieved in vacuum and in ambient atmosphere at room temperature.