High-precision Resistance Modeling for 3D Hybrid Bonding with Contact Resistance Integration

Hybrid bonding technology, integrating Cu-Cu metal bonds and dielectric-dielectric materials, has emerged as a promising solution for high-density, high-performance semiconductor packaging. This study proposes a novel equivalent circuit model for a 4-metal hybrid bonding structure, designed to accurately represent electrical resistance, including contact resistance, in dual damascene hybrid bonding configurations. Finite Element Method (FEM) simulations were conducted to validate the model under varying structural and process parameters such as via count, height, resistivity, and contact resistivity. The proposed model demonstrated high accuracy, with discrepancies below 1% when compared to FEM results. Additionally, experimental validation was performed using fabricated devices with varying via dimensions and metal thicknesses, further confirming the model’s robustness and precision. The proposed model effectively predicts resistance behavior, providing a reliable and efficient tool for optimizing hybrid bonding structures in advanced semiconductor devices.