High-quality, conductive, and transparent Ga-doped ZnO films grown by atmospheric-pressure chemical-vapor deposition

Ha Rim An; Hyo Jin Ahn; Jeong Woo Park

doi:10.1016/j.ceramint.2014.10.028

High-quality, conductive, and transparent Ga-doped ZnO films grown by atmospheric-pressure chemical-vapor deposition

Ha Rim An, Hyo Jin Ahn, Jeong Woo Park

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Ga-doped zinc oxide (GZO) thin films were prepared by atmospheric-pressure chemical-vapor deposition (APCVD) using Ga injection rates over the range 70-150 sccm. When Ga atoms substituted the Zn atoms in the ZnO matrix, the electrical resistance of GZO thin films decreased, because the dopant atom generated one extra free electron. When the injection rate of Ga was 100 sccm, a very low resistivity of 2.03×10^-4 Ω·cm was realized; however, the resistivity was higher when the injection rate of Ga was over 100 sccm because of the agglomeration of Ga atoms in the ZnO matrix. All GZO thin films showed an optical transmittance of over 85%; in particular, when the Ga injection rate was 100 sccm, a superior figure-of-merit (FOM) of 7.58×10^-2 Ω^-1 was found. GZO thin film prepared by APCVD could be a suitable transparent conductive oxide (TCO) material for variable optoelectronic devices.

Original language	English
Pages (from-to)	2253-2259
Number of pages	7
Journal	Ceramics International
Volume	41
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2014.10.028
State	Published - 1 Mar 2015

Keywords

Atmospheric pressure chemical vapor deposition
Electrical properties
Films
Optical properties
ZnO

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title = "High-quality, conductive, and transparent Ga-doped ZnO films grown by atmospheric-pressure chemical-vapor deposition",

abstract = "Ga-doped zinc oxide (GZO) thin films were prepared by atmospheric-pressure chemical-vapor deposition (APCVD) using Ga injection rates over the range 70-150 sccm. When Ga atoms substituted the Zn atoms in the ZnO matrix, the electrical resistance of GZO thin films decreased, because the dopant atom generated one extra free electron. When the injection rate of Ga was 100 sccm, a very low resistivity of 2.03×10-4 Ω·cm was realized; however, the resistivity was higher when the injection rate of Ga was over 100 sccm because of the agglomeration of Ga atoms in the ZnO matrix. All GZO thin films showed an optical transmittance of over 85%; in particular, when the Ga injection rate was 100 sccm, a superior figure-of-merit (FOM) of 7.58×10-2 Ω-1 was found. GZO thin film prepared by APCVD could be a suitable transparent conductive oxide (TCO) material for variable optoelectronic devices.",

keywords = "Atmospheric pressure chemical vapor deposition, Electrical properties, Films, Optical properties, ZnO",

author = "An, {Ha Rim} and Ahn, {Hyo Jin} and Park, {Jeong Woo}",

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doi = "10.1016/j.ceramint.2014.10.028",

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T1 - High-quality, conductive, and transparent Ga-doped ZnO films grown by atmospheric-pressure chemical-vapor deposition

AU - An, Ha Rim

AU - Ahn, Hyo Jin

AU - Park, Jeong Woo

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Ga-doped zinc oxide (GZO) thin films were prepared by atmospheric-pressure chemical-vapor deposition (APCVD) using Ga injection rates over the range 70-150 sccm. When Ga atoms substituted the Zn atoms in the ZnO matrix, the electrical resistance of GZO thin films decreased, because the dopant atom generated one extra free electron. When the injection rate of Ga was 100 sccm, a very low resistivity of 2.03×10-4 Ω·cm was realized; however, the resistivity was higher when the injection rate of Ga was over 100 sccm because of the agglomeration of Ga atoms in the ZnO matrix. All GZO thin films showed an optical transmittance of over 85%; in particular, when the Ga injection rate was 100 sccm, a superior figure-of-merit (FOM) of 7.58×10-2 Ω-1 was found. GZO thin film prepared by APCVD could be a suitable transparent conductive oxide (TCO) material for variable optoelectronic devices.

AB - Ga-doped zinc oxide (GZO) thin films were prepared by atmospheric-pressure chemical-vapor deposition (APCVD) using Ga injection rates over the range 70-150 sccm. When Ga atoms substituted the Zn atoms in the ZnO matrix, the electrical resistance of GZO thin films decreased, because the dopant atom generated one extra free electron. When the injection rate of Ga was 100 sccm, a very low resistivity of 2.03×10-4 Ω·cm was realized; however, the resistivity was higher when the injection rate of Ga was over 100 sccm because of the agglomeration of Ga atoms in the ZnO matrix. All GZO thin films showed an optical transmittance of over 85%; in particular, when the Ga injection rate was 100 sccm, a superior figure-of-merit (FOM) of 7.58×10-2 Ω-1 was found. GZO thin film prepared by APCVD could be a suitable transparent conductive oxide (TCO) material for variable optoelectronic devices.

KW - Atmospheric pressure chemical vapor deposition

KW - Electrical properties

KW - Films

KW - Optical properties

KW - ZnO

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DO - 10.1016/j.ceramint.2014.10.028

M3 - Article

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SN - 0272-8842

VL - 41

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EP - 2259

JO - Ceramics International

JF - Ceramics International

IS - 2

ER -

High-quality, conductive, and transparent Ga-doped ZnO films grown by atmospheric-pressure chemical-vapor deposition

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Keywords

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