High-Speed and Low-Energy Nitride Memristors

Byung Joon Choi; Antonio C. Torrezan; John Paul Strachan; P. G. Kotula; A. J. Lohn; Matthew J. Marinella; Zhiyong Li; R. Stanley Williams; J. Joshua Yang

doi:10.1002/adfm.201600680

High-Speed and Low-Energy Nitride Memristors

Byung Joon Choi
, Antonio C. Torrezan
, John Paul Strachan
, P. G. Kotula
, A. J. Lohn
, Matthew J. Marinella
, Zhiyong Li
, R. Stanley Williams
, J. Joshua Yang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

313 Scopus citations

Abstract

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

Original language	English
Pages (from-to)	5290-5296
Number of pages	7
Journal	Advanced Functional Materials
Volume	26
Issue number	29
DOIs	https://doi.org/10.1002/adfm.201600680
State	Published - 2 Aug 2016

Keywords

memristor
nanoelectronics
nitride
resistive switching memory

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10.1002/adfm.201600680

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title = "High-Speed and Low-Energy Nitride Memristors",

abstract = "High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.",

keywords = "memristor, nanoelectronics, nitride, resistive switching memory",

author = "Choi, \{Byung Joon\} and Torrezan, \{Antonio C.\} and Strachan, \{John Paul\} and Kotula, \{P. G.\} and Lohn, \{A. J.\} and Marinella, \{Matthew J.\} and Zhiyong Li and Williams, \{R. Stanley\} and Yang, \{J. Joshua\}",

note = "Publisher Copyright: {\textcopyright} 2016 The Authors. Published by WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2016",

month = aug,

day = "2",

doi = "10.1002/adfm.201600680",

language = "English",

volume = "26",

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journal = "Advanced Functional Materials",

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T1 - High-Speed and Low-Energy Nitride Memristors

AU - Choi, Byung Joon

AU - Torrezan, Antonio C.

AU - Strachan, John Paul

AU - Kotula, P. G.

AU - Lohn, A. J.

AU - Marinella, Matthew J.

AU - Li, Zhiyong

AU - Williams, R. Stanley

AU - Yang, J. Joshua

PY - 2016/8/2

Y1 - 2016/8/2

N2 - High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

AB - High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

KW - memristor

KW - nanoelectronics

KW - nitride

KW - resistive switching memory

UR - https://www.scopus.com/pages/publications/84971299962

U2 - 10.1002/adfm.201600680

DO - 10.1002/adfm.201600680

M3 - Article

AN - SCOPUS:84971299962

SN - 1616-301X

VL - 26

SP - 5290

EP - 5296

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 29

ER -

High-Speed and Low-Energy Nitride Memristors

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Keywords

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