High-Speed and Low-Energy Nitride Memristors

Byung Joon Choi; Antonio C. Torrezan; John Paul Strachan; P. G. Kotula; A. J. Lohn; Matthew J. Marinella; Zhiyong Li; R. Stanley Williams; J. Joshua Yang

doi:10.1002/adfm.201600680

High-Speed and Low-Energy Nitride Memristors

Byung Joon Choi, Antonio C. Torrezan, John Paul Strachan, P. G. Kotula, A. J. Lohn, Matthew J. Marinella, Zhiyong Li, R. Stanley Williams, J. Joshua Yang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

305 Scopus citations

Abstract

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

Original language	English
Pages (from-to)	5290-5296
Number of pages	7
Journal	Advanced Functional Materials
Volume	26
Issue number	29
DOIs	https://doi.org/10.1002/adfm.201600680
State	Published - 2 Aug 2016

Keywords

memristor
nanoelectronics
nitride
resistive switching memory

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10.1002/adfm.201600680

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title = "High-Speed and Low-Energy Nitride Memristors",

abstract = "High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.",

keywords = "memristor, nanoelectronics, nitride, resistive switching memory",

author = "Choi, \{Byung Joon\} and Torrezan, \{Antonio C.\} and Strachan, \{John Paul\} and Kotula, \{P. G.\} and Lohn, \{A. J.\} and Marinella, \{Matthew J.\} and Zhiyong Li and Williams, \{R. Stanley\} and Yang, \{J. Joshua\}",

note = "Publisher Copyright: {\textcopyright} 2016 The Authors. Published by WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2016",

month = aug,

day = "2",

doi = "10.1002/adfm.201600680",

language = "English",

volume = "26",

pages = "5290--5296",

journal = "Advanced Functional Materials",

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T1 - High-Speed and Low-Energy Nitride Memristors

AU - Choi, Byung Joon

AU - Torrezan, Antonio C.

AU - Strachan, John Paul

AU - Kotula, P. G.

AU - Lohn, A. J.

AU - Marinella, Matthew J.

AU - Li, Zhiyong

AU - Williams, R. Stanley

AU - Yang, J. Joshua

PY - 2016/8/2

Y1 - 2016/8/2

N2 - High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

AB - High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

KW - memristor

KW - nanoelectronics

KW - nitride

KW - resistive switching memory

UR - https://www.scopus.com/pages/publications/84971299962

U2 - 10.1002/adfm.201600680

DO - 10.1002/adfm.201600680

M3 - Article

AN - SCOPUS:84971299962

SN - 1616-301X

VL - 26

SP - 5290

EP - 5296

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 29

ER -

High-Speed and Low-Energy Nitride Memristors

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Keywords

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