Abstract
We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100MHz, which is evaluated from Butterworth-Van Dyke (BVD) equivalent circuit model of FBAR.
| Original language | English |
|---|---|
| Pages (from-to) | 170-173 |
| Number of pages | 4 |
| Journal | Proceedings of the IEEE Ultrasonics Symposium |
| Volume | 1 |
| State | Published - 2003 |
| Event | 2003 IEEE Ultrasonics Symposium - Proceedings - Honolulu, HI, United States Duration: 5 Oct 2003 → 8 Oct 2003 |