Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots

Jung Ho Yoon; Jeong Hwan Han; Ji Sim Jung; Woojin Jeon; Gun Hwan Kim; Seul Ji Song; Jun Yeong Seok; Kyung Jean Yoon; Min Hwan Lee; Cheol Seong Hwang

doi:10.1002/adma.201204572

Highly improved uniformity in the resistive switching parameters of TiO₂ thin films by inserting Ru nanodots

Jung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, Woojin Jeon, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Min Hwan Lee, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

177 Scopus citations

Abstract

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

Original language	English
Pages (from-to)	1987-1992
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	14
DOIs	https://doi.org/10.1002/adma.201204572
State	Published - 11 Apr 2013

Keywords

nanodots
resistive switching memory
thin films
uniformity

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10.1002/adma.201204572

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abstract = "Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.",

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AU - Yoon, Jung Ho

AU - Han, Jeong Hwan

AU - Jung, Ji Sim

AU - Jeon, Woojin

AU - Kim, Gun Hwan

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Yoon, Kyung Jean

AU - Lee, Min Hwan

AU - Hwang, Cheol Seong

PY - 2013/4/11

Y1 - 2013/4/11

N2 - Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

AB - Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

KW - nanodots

KW - resistive switching memory

KW - thin films

KW - uniformity

UR - https://www.scopus.com/pages/publications/84876059408

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DO - 10.1002/adma.201204572

M3 - Article

AN - SCOPUS:84876059408

SN - 0935-9648

VL - 25

SP - 1987

EP - 1992

JO - Advanced Materials

JF - Advanced Materials

IS - 14

ER -

Highly improved uniformity in the resistive switching parameters of TiO₂ thin films by inserting Ru nanodots

Abstract

Keywords

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