Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots

Jung Ho Yoon; Jeong Hwan Han; Ji Sim Jung; Woojin Jeon; Gun Hwan Kim; Seul Ji Song; Jun Yeong Seok; Kyung Jean Yoon; Min Hwan Lee; Cheol Seong Hwang

doi:10.1002/adma.201204572

Highly improved uniformity in the resistive switching parameters of TiO₂ thin films by inserting Ru nanodots

Jung Ho Yoon
, Jeong Hwan Han
, Ji Sim Jung
, Woojin Jeon
, Gun Hwan Kim
, Seul Ji Song
, Jun Yeong Seok
, Kyung Jean Yoon
, Min Hwan Lee
, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

178 Scopus citations

Abstract

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

Original language	English
Pages (from-to)	1987-1992
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	14
DOIs	https://doi.org/10.1002/adma.201204572
State	Published - 11 Apr 2013

Keywords

nanodots
resistive switching memory
thin films
uniformity

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10.1002/adma.201204572

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abstract = "Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.",

keywords = "nanodots, resistive switching memory, thin films, uniformity",

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AU - Yoon, Jung Ho

AU - Han, Jeong Hwan

AU - Jung, Ji Sim

AU - Jeon, Woojin

AU - Kim, Gun Hwan

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Yoon, Kyung Jean

AU - Lee, Min Hwan

AU - Hwang, Cheol Seong

PY - 2013/4/11

Y1 - 2013/4/11

N2 - Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

AB - Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

KW - nanodots

KW - resistive switching memory

KW - thin films

KW - uniformity

UR - https://www.scopus.com/pages/publications/84876059408

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DO - 10.1002/adma.201204572

M3 - Article

AN - SCOPUS:84876059408

SN - 0935-9648

VL - 25

SP - 1987

EP - 1992

JO - Advanced Materials

JF - Advanced Materials

IS - 14

ER -

Highly improved uniformity in the resistive switching parameters of TiO₂ thin films by inserting Ru nanodots

Abstract

Keywords

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