Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction

Jinwoo Park; Tae Hyeon Kim; Sungjoon Kim; Min Suk Song; Sangwook Youn; Kyungho Hong; Byung Gook Park; Hyungjin Kim

doi:10.1109/IEDM45625.2022.10019539

Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction

Jinwoo Park, Tae Hyeon Kim, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyungho Hong, Byung Gook Park, Hyungjin Kim

Dept. of Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent I-V properties. A strong PUF with a large ( sim 10 {17}) number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated 50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1831-1834
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019539
State	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

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10.1109/IEDM45625.2022.10019539

Cite this

Park, J., Kim, T. H., Kim, S., Song, M. S., Youn, S., Hong, K., Park, B. G., & Kim, H. (2022). Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 1831-1834). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019539

@inproceedings{1f2723240e4c48e1a6a98a215c4a17cd,

title = "Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction",

abstract = "In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent I-V properties. A strong PUF with a large ( sim 10 \{17\}) number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1\% (0.896\% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated 50\%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.",

author = "Jinwoo Park and Kim, \{Tae Hyeon\} and Sungjoon Kim and Song, \{Min Suk\} and Sangwook Youn and Kyungho Hong and Park, \{Byung Gook\} and Hyungjin Kim",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019539",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1831--1834",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

}

Park, J, Kim, TH, Kim, S, Song, MS, Youn, S, Hong, K, Park, BG & Kim, H 2022, Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 1831-1834, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019539

Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction. / Park, Jinwoo; Kim, Tae Hyeon; Kim, Sungjoon et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1831-1834 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction

AU - Park, Jinwoo

AU - Kim, Tae Hyeon

AU - Kim, Sungjoon

AU - Song, Min Suk

AU - Youn, Sangwook

AU - Hong, Kyungho

AU - Park, Byung Gook

AU - Kim, Hyungjin

PY - 2022

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N2 - In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent I-V properties. A strong PUF with a large ( sim 10 {17}) number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated 50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.

AB - In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent I-V properties. A strong PUF with a large ( sim 10 {17}) number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated 50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.

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Park J, Kim TH, Kim S, Song MS, Youn S, Hong K et al. Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1831-1834. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019539

Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction

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