Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

Tae Hyeon Kim; Sungjun Kim; Hyungjin Kim; Min Hwi Kim; Suhyun Bang; Seongjae Cho; Byung Gook Park

doi:10.1016/j.sse.2017.10.015

Highly uniform and reliable resistive switching characteristics of a Ni/WO_x/p⁺-Si memory device

Tae Hyeon Kim
, Sungjun Kim
, Hyungjin Kim
, Min Hwi Kim
, Suhyun Bang
, Seongjae Cho
, Byung Gook Park

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WO_x/p⁺-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WO_x-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Solid-State Electronics
Volume	140
DOIs	https://doi.org/10.1016/j.sse.2017.10.015
State	Published - Feb 2018

Keywords

Bipolar resistive switching
MIS structure
Rapid thermal oxidation (RTO)
Space-charge-limited current (SCLC)
WO RRAM

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10.1016/j.sse.2017.10.015

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@article{9d52d25df009406f8ce881d75b278fd6,

title = "Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device",

abstract = "In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.",

keywords = "Bipolar resistive switching, MIS structure, Rapid thermal oxidation (RTO), Space-charge-limited current (SCLC), WO RRAM",

author = "Kim, \{Tae Hyeon\} and Sungjun Kim and Hyungjin Kim and Kim, \{Min Hwi\} and Suhyun Bang and Seongjae Cho and Park, \{Byung Gook\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

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doi = "10.1016/j.sse.2017.10.015",

language = "English",

volume = "140",

pages = "51--54",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

AU - Kim, Tae Hyeon

AU - Kim, Sungjun

AU - Kim, Hyungjin

AU - Kim, Min Hwi

AU - Bang, Suhyun

AU - Cho, Seongjae

AU - Park, Byung Gook

PY - 2018/2

Y1 - 2018/2

N2 - In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.

AB - In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.

KW - Bipolar resistive switching

KW - MIS structure

KW - Rapid thermal oxidation (RTO)

KW - Space-charge-limited current (SCLC)

KW - WO RRAM

UR - https://www.scopus.com/pages/publications/85041241439

U2 - 10.1016/j.sse.2017.10.015

DO - 10.1016/j.sse.2017.10.015

M3 - Article

AN - SCOPUS:85041241439

SN - 0038-1101

VL - 140

SP - 51

EP - 54

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Highly uniform and reliable resistive switching characteristics of a Ni/WO_x/p⁺-Si memory device

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Keywords

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