Homo-junction pn diode using p-type SnO and n-type SnO2 thin films

Joseph Um; Sarah Eunkyung Kim

doi:10.1149/2.0051408ssl

Homo-junction pn diode using p-type SnO and n-type SnO₂ thin films

Joseph Um, Sarah Eunkyung Kim

Dept. of Semiconductor Engineering

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Tin oxide thin films are of great interest for device applications, but in spite of their good optical transparency and outstanding semiconductor properties, stable p-type tin oxide needs to be developed. In this study both p-type SnO and n-type SnO₂ thin films were deposited by reactive rf magnetron sputtering using Sn target in Ar and O₂ gas mixture. The structural, electrical, and optical properties of both p-type SnO and n-type SnO₂ thin films were analysed. The transparent homo-junction pn diode was also fabricated and it showed a fairly good rectification behavior with a turn-on voltage of 2.3 V.

Original language	English
Pages (from-to)	P94-P98
Journal	ECS Solid State Letters
Volume	3
Issue number	8
DOIs	https://doi.org/10.1149/2.0051408ssl
State	Published - 2014

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abstract = "Tin oxide thin films are of great interest for device applications, but in spite of their good optical transparency and outstanding semiconductor properties, stable p-type tin oxide needs to be developed. In this study both p-type SnO and n-type SnO2 thin films were deposited by reactive rf magnetron sputtering using Sn target in Ar and O2 gas mixture. The structural, electrical, and optical properties of both p-type SnO and n-type SnO2 thin films were analysed. The transparent homo-junction pn diode was also fabricated and it showed a fairly good rectification behavior with a turn-on voltage of 2.3 V.",

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AB - Tin oxide thin films are of great interest for device applications, but in spite of their good optical transparency and outstanding semiconductor properties, stable p-type tin oxide needs to be developed. In this study both p-type SnO and n-type SnO2 thin films were deposited by reactive rf magnetron sputtering using Sn target in Ar and O2 gas mixture. The structural, electrical, and optical properties of both p-type SnO and n-type SnO2 thin films were analysed. The transparent homo-junction pn diode was also fabricated and it showed a fairly good rectification behavior with a turn-on voltage of 2.3 V.

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ER -

Homo-junction pn diode using p-type SnO and n-type SnO₂ thin films

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