Hot-electron transport through Ni80Fe20 in a spin-valve transistor

R. Vlutters; R. Jansen; O. M.J. Van 'T Erve; S. D. Kim; J. C. Lodder

doi:10.1063/1.1357853

Hot-electron transport through Ni₈₀Fe₂₀ in a spin-valve transistor

R. Vlutters, R. Jansen, O. M.J. Van 'T Erve, S. D. Kim, J. C. Lodder

Dept. of Mechanical System and Design Engineering

University of Twente

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

Hot-electron transport in Ni₈₀Fe₂₀ thin films was studied using a spin-valve transistor. By varying the NiFe thickness from 10 to 100 Å we obtain an attenuation length of 43 A for majority-spin hot electrons at 0.9 eV above the Fermi level. Based on such relatively long bulk attentuation lengths, one would expect a current transfer ratio that is much larger than the measured value. We propose that the discrepancy can be accounted for by considering interfacial scattering. Increasing the growth quality should thus provide a means to improve the current transfer ratio.

Original language	English
Pages (from-to)	7305-7307
Number of pages	3
Journal	Journal of Applied Physics
Volume	89
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1357853
State	Published - 1 Jun 2001
Event	8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: 7 Jan 2001 → 11 Jan 2001

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title = "Hot-electron transport through Ni80Fe20 in a spin-valve transistor",

abstract = "Hot-electron transport in Ni80Fe20 thin films was studied using a spin-valve transistor. By varying the NiFe thickness from 10 to 100 {\AA} we obtain an attenuation length of 43 A for majority-spin hot electrons at 0.9 eV above the Fermi level. Based on such relatively long bulk attentuation lengths, one would expect a current transfer ratio that is much larger than the measured value. We propose that the discrepancy can be accounted for by considering interfacial scattering. Increasing the growth quality should thus provide a means to improve the current transfer ratio.",

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T1 - Hot-electron transport through Ni80Fe20 in a spin-valve transistor

AU - Vlutters, R.

AU - Jansen, R.

AU - Van 'T Erve, O. M.J.

AU - Kim, S. D.

AU - Lodder, J. C.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - Hot-electron transport in Ni80Fe20 thin films was studied using a spin-valve transistor. By varying the NiFe thickness from 10 to 100 Å we obtain an attenuation length of 43 A for majority-spin hot electrons at 0.9 eV above the Fermi level. Based on such relatively long bulk attentuation lengths, one would expect a current transfer ratio that is much larger than the measured value. We propose that the discrepancy can be accounted for by considering interfacial scattering. Increasing the growth quality should thus provide a means to improve the current transfer ratio.

AB - Hot-electron transport in Ni80Fe20 thin films was studied using a spin-valve transistor. By varying the NiFe thickness from 10 to 100 Å we obtain an attenuation length of 43 A for majority-spin hot electrons at 0.9 eV above the Fermi level. Based on such relatively long bulk attentuation lengths, one would expect a current transfer ratio that is much larger than the measured value. We propose that the discrepancy can be accounted for by considering interfacial scattering. Increasing the growth quality should thus provide a means to improve the current transfer ratio.

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U2 - 10.1063/1.1357853

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SN - 0021-8979

VL - 89

SP - 7305

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

T2 - 8th Joint Magnetism and Magnetic Materials-Intermag Conference

Y2 - 7 January 2001 through 11 January 2001

ER -

Hot-electron transport through Ni₈₀Fe₂₀ in a spin-valve transistor

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