Identification of a determining parameter for resistive switching of TiO2 thin films

Christina Rohde; Byung Joon Choi; Doo Seok Jeong; Seol Choi; Jin Shi Zhao; Cheol Seong Hwang

doi:10.1063/1.1968416

Identification of a determining parameter for resistive switching of TiO₂ thin films

Christina Rohde, Byung Joon Choi, Doo Seok Jeong, Seol Choi, Jin Shi Zhao, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

320 Scopus citations

Abstract

Electric-pulse-induced resistive switching of 43 nm thick Ti O2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables.

Original language	English
Article number	262907
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	26
DOIs	https://doi.org/10.1063/1.1968416
State	Published - 27 Jun 2005

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title = "Identification of a determining parameter for resistive switching of TiO2 thin films",

abstract = "Electric-pulse-induced resistive switching of 43 nm thick Ti O2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables.",

author = "Christina Rohde and Choi, \{Byung Joon\} and Jeong, \{Doo Seok\} and Seol Choi and Zhao, \{Jin Shi\} and Hwang, \{Cheol Seong\}",

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doi = "10.1063/1.1968416",

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T1 - Identification of a determining parameter for resistive switching of TiO2 thin films

AU - Rohde, Christina

AU - Choi, Byung Joon

AU - Jeong, Doo Seok

AU - Choi, Seol

AU - Zhao, Jin Shi

AU - Hwang, Cheol Seong

PY - 2005/6/27

Y1 - 2005/6/27

N2 - Electric-pulse-induced resistive switching of 43 nm thick Ti O2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables.

AB - Electric-pulse-induced resistive switching of 43 nm thick Ti O2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables.

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SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262907

ER -

Identification of a determining parameter for resistive switching of TiO₂ thin films

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