@inproceedings{681a509013e04fd6988767788deb8d30,
title = "Impact of random phase distribution in 3D vertical NAND architecture of ferroelectric transistors on in-memory computing",
abstract = "Ferroelectric field-effect transistors (FeFETs) with 3D vertical NAND architecture (3D V-NAND) are investigated for in-memory computing. In polycrystalline ferroelectric Hafnia thin film, there are different phases such as monoclinic (M), and orthorhombic (O) phases. Those are randomly distributed throughout the ferroelectric gate stack. Such positional dispersion of two phases introduces read-out current variation in 3D V-NAND of FeFETs. Herein, we employ TCAD simulations to quantify such variation and optimize bias conditions for improving the accuracy of in-memory computing.",
keywords = "Ferroelectric, In-memory computing, Mixed phases, Nonvolatile memory, Variations",
author = "Gihun Choe and Wonbo Shim and Jae Hur and Khan, \{Asif Islam\} and Shimeng Yu",
note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.; 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 ; Conference date: 03-09-2020 Through 06-10-2020",
year = "2020",
month = sep,
day = "23",
doi = "10.23919/SISPAD49475.2020.9241618",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "165--168",
booktitle = "2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020",
}