Impacts of ripple current to the loading and lifetime of power semiconductor device

Ke Ma; Ui Min Choi; Frede Blaabjerg

doi:10.1109/APEC.2017.7931021

Impacts of ripple current to the loading and lifetime of power semiconductor device

Ke Ma, Ui Min Choi, Frede Blaabjerg

Media IT Engineering Program

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The thermal loading of power electronics devices is determined by many factors and has being a crucial design consideration because it is closely related to the reliability and cost of the converter system. In this paper the impacts of the ripple current to the loss and thermal loading, as well as reliability performances of power devices are comprehensively investigated and tested. It is concluded that the amplitude of ripple current may modify the loss and thermal loading of the power devices, especially under the conditions of converter with low power output, and thus the lifetime of devices could be disturbed.

Original language	English
Title of host publication	2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2305-2311
Number of pages	7
ISBN (Electronic)	9781509053667
DOIs	https://doi.org/10.1109/APEC.2017.7931021
State	Published - 17 May 2017
Event	32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States Duration: 26 Mar 2017 → 30 Mar 2017

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference	32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
Country/Territory	United States
City	Tampa
Period	26/03/17 → 30/03/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/APEC.2017.7931021

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Ma, K., Choi, U. M., & Blaabjerg, F. (2017). Impacts of ripple current to the loading and lifetime of power semiconductor device. In 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017 (pp. 2305-2311). Article 7931021 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2017.7931021

Ma, Ke ; Choi, Ui Min ; Blaabjerg, Frede. / Impacts of ripple current to the loading and lifetime of power semiconductor device. 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 2305-2311 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

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title = "Impacts of ripple current to the loading and lifetime of power semiconductor device",

abstract = "The thermal loading of power electronics devices is determined by many factors and has being a crucial design consideration because it is closely related to the reliability and cost of the converter system. In this paper the impacts of the ripple current to the loss and thermal loading, as well as reliability performances of power devices are comprehensively investigated and tested. It is concluded that the amplitude of ripple current may modify the loss and thermal loading of the power devices, especially under the conditions of converter with low power output, and thus the lifetime of devices could be disturbed.",

author = "Ke Ma and Choi, \{Ui Min\} and Frede Blaabjerg",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 ; Conference date: 26-03-2017 Through 30-03-2017",

year = "2017",

month = may,

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doi = "10.1109/APEC.2017.7931021",

language = "English",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

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Ma, K, Choi, UM & Blaabjerg, F 2017, Impacts of ripple current to the loading and lifetime of power semiconductor device. in 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017., 7931021, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Institute of Electrical and Electronics Engineers Inc., pp. 2305-2311, 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017, Tampa, United States, 26/03/17. https://doi.org/10.1109/APEC.2017.7931021

Impacts of ripple current to the loading and lifetime of power semiconductor device. / Ma, Ke; Choi, Ui Min; Blaabjerg, Frede.
2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2305-2311 7931021 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ma, Ke

AU - Choi, Ui Min

AU - Blaabjerg, Frede

PY - 2017/5/17

Y1 - 2017/5/17

N2 - The thermal loading of power electronics devices is determined by many factors and has being a crucial design consideration because it is closely related to the reliability and cost of the converter system. In this paper the impacts of the ripple current to the loss and thermal loading, as well as reliability performances of power devices are comprehensively investigated and tested. It is concluded that the amplitude of ripple current may modify the loss and thermal loading of the power devices, especially under the conditions of converter with low power output, and thus the lifetime of devices could be disturbed.

AB - The thermal loading of power electronics devices is determined by many factors and has being a crucial design consideration because it is closely related to the reliability and cost of the converter system. In this paper the impacts of the ripple current to the loss and thermal loading, as well as reliability performances of power devices are comprehensively investigated and tested. It is concluded that the amplitude of ripple current may modify the loss and thermal loading of the power devices, especially under the conditions of converter with low power output, and thus the lifetime of devices could be disturbed.

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M3 - Conference contribution

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T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

SP - 2305

EP - 2311

BT - 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017

Y2 - 26 March 2017 through 30 March 2017

ER -

Ma K, Choi UM, Blaabjerg F. Impacts of ripple current to the loading and lifetime of power semiconductor device. In 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2305-2311. 7931021. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC.2017.7931021

Impacts of ripple current to the loading and lifetime of power semiconductor device

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