@inproceedings{0b5b014ac1bf4118ad99d643290fe911,
title = "Improved growth behaviors and electrical properties of SrTiO3 thin films using the optimized seed layer deposited by atomic layer deposition",
abstract = "SrTiO3 (STO) thin films were deposited by an atomic layer deposition at a higher temperature (370 °C) in order to improve the crystallinity and density of the film using Ti(O-iPr)2(thd) 2 and Sr(thd)2 as Ti-, and Sr-precursors, respectively, and H2O as the oxidant. With the help of the crystallized seed-layer, in-situ crystallized STO film could be deposited even at the as-deposited state with the excellent electrical performances. The process conditions including the annealing temperature and the thickness of the seed-layer were crucial for achieving the high dielectric constant. From a planar capacitor structure consisting of Pt/20-nm-thick STO/Ru(bottom) Tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10- 7 A/cm2 at 0.8 V) were achieved. The Schottky conduction mechanism mainly contributed to the electrical conduction process in the low electric field region (< ∼ 0.3 MV/cm) with a Schottky barrier height of 0.47 eV between Ru and STO. The Fowler-Nordheim tunneling was appeared as the primary conduction mechanism in the high electric field region (0.3∼0.5 MV/cm).",
author = "Lee, \{Sang Woon\} and Han, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",
year = "2009",
doi = "10.1149/1.3122124",
language = "English",
isbn = "9781566777100",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "685--698",
booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",
edition = "2",
note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}