Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

Jae Gil Lee; Dong Hwan Kim; Su Keun Eom; Seung Hyun Roh; Kwang Seok Seo; Hyun Seop Kim; Hyungtak Kim; Ho Young Cha; Young Chul Byun

doi:10.3938/jkps.72.166

Improved interface characteristics of Mo/SiO₂/4H-SiC metal-oxide-semiconductor with post-metallization annealing

Jae Gil Lee, Dong Hwan Kim, Su Keun Eom, Seung Hyun Roh, Kwang Seok Seo, Hyun Seop Kim, Hyungtak Kim, Ho Young Cha, Young Chul Byun

Dept. of Mechanical System and Design Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO₂ on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO₂/4H-SiC in the temperature range from 600 to 1000 °C in N₂ or a forming gas ambient. The fabricated Mo/SiO₂/4H-SiC MOS device annealed at 800 °C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.

Original language	English
Pages (from-to)	166-170
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	72
Issue number	1
DOIs	https://doi.org/10.3938/jkps.72.166
State	Published - 1 Jan 2018

Keywords

4H-SiC
High temperature
Molybdenum
MOS interface
Post-metallization annealing

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10.3938/jkps.72.166

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title = "Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing",

abstract = "The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO2/4H-SiC in the temperature range from 600 to 1000 °C in N2 or a forming gas ambient. The fabricated Mo/SiO2/4H-SiC MOS device annealed at 800 °C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.",

keywords = "4H-SiC, High temperature, Molybdenum, MOS interface, Post-metallization annealing",

author = "Lee, \{Jae Gil\} and Kim, \{Dong Hwan\} and Eom, \{Su Keun\} and Roh, \{Seung Hyun\} and Seo, \{Kwang Seok\} and Kim, \{Hyun Seop\} and Hyungtak Kim and Cha, \{Ho Young\} and Byun, \{Young Chul\}",

note = "Publisher Copyright: {\textcopyright} 2018, The Korean Physical Society.",

year = "2018",

month = jan,

day = "1",

doi = "10.3938/jkps.72.166",

language = "English",

volume = "72",

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T1 - Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

AU - Lee, Jae Gil

AU - Kim, Dong Hwan

AU - Eom, Su Keun

AU - Roh, Seung Hyun

AU - Seo, Kwang Seok

AU - Kim, Hyun Seop

AU - Kim, Hyungtak

AU - Cha, Ho Young

AU - Byun, Young Chul

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO2/4H-SiC in the temperature range from 600 to 1000 °C in N2 or a forming gas ambient. The fabricated Mo/SiO2/4H-SiC MOS device annealed at 800 °C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.

AB - The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO2/4H-SiC in the temperature range from 600 to 1000 °C in N2 or a forming gas ambient. The fabricated Mo/SiO2/4H-SiC MOS device annealed at 800 °C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.

KW - 4H-SiC

KW - High temperature

KW - Molybdenum

KW - MOS interface

KW - Post-metallization annealing

UR - https://www.scopus.com/pages/publications/85040076342

U2 - 10.3938/jkps.72.166

DO - 10.3938/jkps.72.166

M3 - Article

AN - SCOPUS:85040076342

SN - 0374-4884

VL - 72

SP - 166

EP - 170

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Improved interface characteristics of Mo/SiO₂/4H-SiC metal-oxide-semiconductor with post-metallization annealing

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Keywords

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