TY - JOUR
T1 - Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer
AU - Kim, Jun Young
AU - Cho, Eunae
AU - Kim, Jaehoon
AU - Shin, Hyeonwoo
AU - Roh, Jeongkyun
AU - Thambidurai, Mariyappan
AU - Kang, Chan Mo
AU - Song, Hyung Jun
AU - Kim, Seong Min
AU - Kim, Hyeok
AU - Lee, Changhee
N1 - Publisher Copyright:
© 2015 Optical Society of America.
PY - 2015/9/15
Y1 - 2015/9/15
N2 - We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC70BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10-3 Ωcm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC70BM), the power conversion efficiency increased from 3.7 to 5.6%.
AB - We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC70BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10-3 Ωcm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC70BM), the power conversion efficiency increased from 3.7 to 5.6%.
UR - https://www.scopus.com/pages/publications/84943629341
U2 - 10.1364/OE.23.0A1334
DO - 10.1364/OE.23.0A1334
M3 - Article
AN - SCOPUS:84943629341
SN - 1094-4087
VL - 23
SP - A1334-A1341
JO - Optics Express
JF - Optics Express
IS - 19
ER -