Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

Jeong Hwan Han; Sora Han; Woongkyu Lee; Sang Woon Lee; Seong Keun Kim; Julien Gatineau; Christian Dussarrat; Cheol Seong Hwang

doi:10.1063/1.3609875

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO₂ film as bottom electrode

Jeong Hwan Han, Sora Han, Woongkyu Lee, Sang Woon Lee, Seong Keun Kim, Julien Gatineau, Christian Dussarrat, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

The dielectric constant, equivalent oxide thickness (t_ox), and leakage current properties of Pt/(Al-doped)TiO₂/RuO₂ capacitors were examined in comparison with Pt/(Al-doped)TiO₂/Ru capacitors. The Al-doped TiO₂ and undoped TiO₂ films grown on RuO₂ showed high dielectric constants of 60 and 102, respectively. The minimum t_ox of these films were 0.46 nm and 0.56 nm, respectively, while still satisfying the dynamic random access memory leakage current density specification (1 × 10^-7 Acm ^-2 at capacitor voltage of 0.8 V). These excellent electrical properties of (Al-doped) TiO₂ on RuO₂ were attributed to the high work function and the reduced interfacial effect on RuO₂.

Original language	English
Article number	022901
Journal	Applied Physics Letters
Volume	99
Issue number	2
DOIs	https://doi.org/10.1063/1.3609875
State	Published - 11 Jul 2011

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title = "Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode",

abstract = "The dielectric constant, equivalent oxide thickness (tox), and leakage current properties of Pt/(Al-doped)TiO2/RuO2 capacitors were examined in comparison with Pt/(Al-doped)TiO2/Ru capacitors. The Al-doped TiO2 and undoped TiO2 films grown on RuO2 showed high dielectric constants of 60 and 102, respectively. The minimum tox of these films were 0.46 nm and 0.56 nm, respectively, while still satisfying the dynamic random access memory leakage current density specification (1 × 10-7 Acm -2 at capacitor voltage of 0.8 V). These excellent electrical properties of (Al-doped) TiO2 on RuO2 were attributed to the high work function and the reduced interfacial effect on RuO2.",

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T1 - Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

AU - Han, Jeong Hwan

AU - Han, Sora

AU - Lee, Woongkyu

AU - Lee, Sang Woon

AU - Kim, Seong Keun

AU - Gatineau, Julien

AU - Dussarrat, Christian

AU - Hwang, Cheol Seong

PY - 2011/7/11

Y1 - 2011/7/11

N2 - The dielectric constant, equivalent oxide thickness (tox), and leakage current properties of Pt/(Al-doped)TiO2/RuO2 capacitors were examined in comparison with Pt/(Al-doped)TiO2/Ru capacitors. The Al-doped TiO2 and undoped TiO2 films grown on RuO2 showed high dielectric constants of 60 and 102, respectively. The minimum tox of these films were 0.46 nm and 0.56 nm, respectively, while still satisfying the dynamic random access memory leakage current density specification (1 × 10-7 Acm -2 at capacitor voltage of 0.8 V). These excellent electrical properties of (Al-doped) TiO2 on RuO2 were attributed to the high work function and the reduced interfacial effect on RuO2.

AB - The dielectric constant, equivalent oxide thickness (tox), and leakage current properties of Pt/(Al-doped)TiO2/RuO2 capacitors were examined in comparison with Pt/(Al-doped)TiO2/Ru capacitors. The Al-doped TiO2 and undoped TiO2 films grown on RuO2 showed high dielectric constants of 60 and 102, respectively. The minimum tox of these films were 0.46 nm and 0.56 nm, respectively, while still satisfying the dynamic random access memory leakage current density specification (1 × 10-7 Acm -2 at capacitor voltage of 0.8 V). These excellent electrical properties of (Al-doped) TiO2 on RuO2 were attributed to the high work function and the reduced interfacial effect on RuO2.

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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO₂ film as bottom electrode

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