Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification

Nonpolar a-plane GaN was grown by metal-organic chemical vapor deposition and in-situ surface modification process was introduced by growth interruption during the growth for higher crystal quality a-plane GaN, which is an effective way to improve the crystal quality of a-plane GaN without additional ex-situ process. Growing surface of a-plane GaN was monitored by in-situ reflectance intensity and atomic force microscopy. The characteristics of a-plane GaN were investigated by high resolution X-ray diffraction and room temperature photoluminescence measurements with a 266 nm Nd-YAG laser as an excitation source.