Improvement of the multi-level cell performance by a soft program method in flash memory devices

Jong Kyung Park; Ki Hong Lee; Seung Ho Pyi; Seok Hee Lee; Byung Jin Cho

doi:10.1016/j.sse.2014.02.012

Improvement of the multi-level cell performance by a soft program method in flash memory devices

Jong Kyung Park, Ki Hong Lee, Seung Ho Pyi, Seok Hee Lee, Byung Jin Cho

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A soft program method is proposed for charge-trap flash (CTF) memory devices. By adding a subsequent small positive gate pulse after main Fowler-Nordheim (FN) injection programming, early charge loss is greatly reduced. The multi-level cell performance as well as the initial flat-band voltage (V_FB) instability can thereby be improved by removing the trapped electrons at the shallow traps in the blocking oxide layer. The proposed soft program method is a simple but very effective way to improve the fast retention property without changing the memory structure, especially for cases where the κ-value of the blocking oxide is high.

Original language	English
Pages (from-to)	86-90
Number of pages	5
Journal	Solid-State Electronics
Volume	94
DOIs	https://doi.org/10.1016/j.sse.2014.02.012
State	Published - Apr 2014

Keywords

Blocking oxide
Reliability
Soft program
TANOS

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10.1016/j.sse.2014.02.012

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title = "Improvement of the multi-level cell performance by a soft program method in flash memory devices",

abstract = "A soft program method is proposed for charge-trap flash (CTF) memory devices. By adding a subsequent small positive gate pulse after main Fowler-Nordheim (FN) injection programming, early charge loss is greatly reduced. The multi-level cell performance as well as the initial flat-band voltage (VFB) instability can thereby be improved by removing the trapped electrons at the shallow traps in the blocking oxide layer. The proposed soft program method is a simple but very effective way to improve the fast retention property without changing the memory structure, especially for cases where the κ-value of the blocking oxide is high.",

keywords = "Blocking oxide, Reliability, Soft program, TANOS",

author = "Park, \{Jong Kyung\} and Lee, \{Ki Hong\} and Pyi, \{Seung Ho\} and Lee, \{Seok Hee\} and Cho, \{Byung Jin\}",

year = "2014",

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language = "English",

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AU - Park, Jong Kyung

AU - Lee, Ki Hong

AU - Pyi, Seung Ho

AU - Lee, Seok Hee

AU - Cho, Byung Jin

PY - 2014/4

Y1 - 2014/4

N2 - A soft program method is proposed for charge-trap flash (CTF) memory devices. By adding a subsequent small positive gate pulse after main Fowler-Nordheim (FN) injection programming, early charge loss is greatly reduced. The multi-level cell performance as well as the initial flat-band voltage (VFB) instability can thereby be improved by removing the trapped electrons at the shallow traps in the blocking oxide layer. The proposed soft program method is a simple but very effective way to improve the fast retention property without changing the memory structure, especially for cases where the κ-value of the blocking oxide is high.

AB - A soft program method is proposed for charge-trap flash (CTF) memory devices. By adding a subsequent small positive gate pulse after main Fowler-Nordheim (FN) injection programming, early charge loss is greatly reduced. The multi-level cell performance as well as the initial flat-band voltage (VFB) instability can thereby be improved by removing the trapped electrons at the shallow traps in the blocking oxide layer. The proposed soft program method is a simple but very effective way to improve the fast retention property without changing the memory structure, especially for cases where the κ-value of the blocking oxide is high.

KW - Blocking oxide

KW - Reliability

KW - Soft program

KW - TANOS

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M3 - Article

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SN - 0038-1101

VL - 94

SP - 86

EP - 90

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Improvement of the multi-level cell performance by a soft program method in flash memory devices

Abstract

Keywords

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