@inproceedings{152f465d8c5a4a43b1357d76adacff45,
title = "Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer",
abstract = "Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.",
keywords = "Crystalline quality, GaInP, Ge, Solar cells, Triple junction",
author = "Kang, \{Ho Kwan\} and Jim, \{Dong Hwan\} and Kim, \{Chang Zoo\} and Song, \{Keun Man\} and Wonkyu Park and Ko, \{Chul Gi\} and Jinsub Park and Hogyoung Kim",
year = "2013",
doi = "10.1063/1.4848464",
language = "English",
isbn = "9780735411944",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "419--420",
booktitle = "Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012",
note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",
}
