Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer

Ho Kwan Kang; Dong Hwan Jim; Chang Zoo Kim; Keun Man Song; Wonkyu Park; Chul Gi Ko; Jinsub Park; Hogyoung Kim

doi:10.1063/1.4848464

Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer

Ho Kwan Kang
, Dong Hwan Jim
, Chang Zoo Kim
, Keun Man Song
, Wonkyu Park
, Chul Gi Ko
, Jinsub Park
, Hogyoung Kim

Dept. of Optometry

Korea Advanced Nano Fab Center
Hanyang University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.

Original language	English
Title of host publication	Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
Publisher	American Institute of Physics Inc.
Pages	419-420
Number of pages	2
ISBN (Print)	9780735411944
DOIs	https://doi.org/10.1063/1.4848464
State	Published - 2013
Event	31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012

Publication series

Name	AIP Conference Proceedings
Volume	1566
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	31st International Conference on the Physics of Semiconductors, ICPS 2012
Country/Territory	Switzerland
City	Zurich
Period	29/07/12 → 3/08/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Crystalline quality
GaInP
Ge
Solar cells
Triple junction

Access to Document

10.1063/1.4848464

Cite this

Kang, H. K., Jim, D. H., Kim, C. Z., Song, K. M., Park, W., Ko, C. G., Park, J., & Kim, H. (2013). Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 419-420). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848464

Kang, Ho Kwan ; Jim, Dong Hwan ; Kim, Chang Zoo et al. / Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer. Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. pp. 419-420 (AIP Conference Proceedings).

@inproceedings{152f465d8c5a4a43b1357d76adacff45,

title = "Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer",

abstract = "Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.",

keywords = "Crystalline quality, GaInP, Ge, Solar cells, Triple junction",

author = "Kang, \{Ho Kwan\} and Jim, \{Dong Hwan\} and Kim, \{Chang Zoo\} and Song, \{Keun Man\} and Wonkyu Park and Ko, \{Chul Gi\} and Jinsub Park and Hogyoung Kim",

year = "2013",

doi = "10.1063/1.4848464",

language = "English",

isbn = "9780735411944",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

pages = "419--420",

booktitle = "Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012",

note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",

}

Kang, HK, Jim, DH, Kim, CZ, Song, KM, Park, W, Ko, CG, Park, J & Kim, H 2013, Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer. in Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. AIP Conference Proceedings, vol. 1566, American Institute of Physics Inc., pp. 419-420, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, 29/07/12. https://doi.org/10.1063/1.4848464

Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer. / Kang, Ho Kwan; Jim, Dong Hwan; Kim, Chang Zoo et al.
Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. p. 419-420 (AIP Conference Proceedings; Vol. 1566).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer

AU - Kang, Ho Kwan

AU - Jim, Dong Hwan

AU - Kim, Chang Zoo

AU - Song, Keun Man

AU - Park, Wonkyu

AU - Ko, Chul Gi

AU - Park, Jinsub

AU - Kim, Hogyoung

PY - 2013

Y1 - 2013

N2 - Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.

AB - Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.

KW - Crystalline quality

KW - GaInP

KW - Ge

KW - Solar cells

KW - Triple junction

UR - https://www.scopus.com/pages/publications/84907374007

U2 - 10.1063/1.4848464

DO - 10.1063/1.4848464

M3 - Conference contribution

AN - SCOPUS:84907374007

SN - 9780735411944

T3 - AIP Conference Proceedings

SP - 419

EP - 420

BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012

PB - American Institute of Physics Inc.

T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012

Y2 - 29 July 2012 through 3 August 2012

ER -

Kang HK, Jim DH, Kim CZ, Song KM, Park W, Ko CG et al. Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc. 2013. p. 419-420. (AIP Conference Proceedings). doi: 10.1063/1.4848464

Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer

Abstract

Publication series

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UN SDGs

Keywords

Access to Document

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